Datasheet > KSP2907A_06

KSP2907A_06

更新时间： 2024-11-30 03:48:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		放大器
页数	文件大小	规格书
5页	156K
描述
PNP General Purpose Amplifier

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KSP2907A_06 数据手册

September 2006

KSP2907A

PNP General Purpose Amplifier

Features

•

Collector-Emitter Voltage: VCEO= 60V

Collector Power Dissipation: PC (max)=625mW

Suffix “-C” means a Center Collector (1.Emitter 2.Collector 3.Base)

Non suffix “-C” means a Side Collector (1.Emitter 2.Base 3.Collector)

Available as PN2907A

TO-92

2 3

KSP2907A : 1. Emitter 2. Base

3. Collector

KSP2907AC : 1. Emitter 2. Collector 3. Base

Absolute Maximum Ratings *

T = 25°C unless otherwise noted

Symbol

Parameter

Value

-60

Units

V_CBO

Collector-Base Voltage

V_CEO

V_EBO

I_C

T_J

T_stg

Collector-Emitter Voltage

Emitter-Base Voltage

Collector current

-60

-5

-600

°C

Junction Temperature

Storage Temperature

+150

-55 ~ +150

* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics T =25°C unless otherwise noted

Symbol

Parameter

Max

625

Units

P_C

Collector Power Dissipation, by R_θJA

R_θJC

R_θJA

Thermal Resistance, Junction to Case(note1)

Thermal Resistance, Junction to Ambient(note2)

83.3

200

°C/W

Note1. Infinite heat sink.

Note2. Minimum Land pad size.

Electrical Characteristics *

T = 25°C unless otherwise noted

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Parameter

Test Condition

I_C= -10µA, I_E= 0

Min. Typ. Max. Units

Collector-Base Breakdown Voltage

-60

-5.0

Collector-Emitter Breakdown Voltage I_C= -10mA, I_B= 0

Emitter-Base Breakdown Voltage

Collector Cutoff Current

DC Current Gain

I_E= -10µA, I_C= 0

V_CB= -50V, I_E= 0

-10

h_FE

V_CE= -10V, I_C= -0.1mA,

V_CE= -10V, I_C= -1mA,

V_CE= -10V, I_C= -10mA,

V_CE= -10V, I_C= -150mA,

V_CE= -10V, I_C= -500mA,

I_C= -150mA, I_B= -15mA

I_C= -500mA, I_B= -50mA

I_C= -150mA, I_B= -15mA

I_C= -500mA, I_B= -50mA

V_CB= -10V, I_E= 0, f = 1.0MHz

I_C= -50mA, V_CE= -20V,

f = 100MHz

100

300

V_CE(sat)

V_BE(sat)

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

-0.4

-1.6

-1.3

-2.6

C_obo

f_T

Output Capacitance

MHz

Current Gain Bandwidth Product

200

t_ON

t_OFF

Turn On Time

Turn Off Time

V_CC= -30V, I_C= -150mA, I_B1= -15mA

V_CC= -6V, I_C= -150mA,I_B1= I_B1= -15mA

100

* DC Item are tested by Pulse Test: Pulse Width≤300us, Duty Cycle≤2%

KSP2907A Rev. E

www.fairchildsemi.com

12 3 4 5

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与KSP2907A_06相关器件

型号	品牌	获取价格	描述	数据表
KSP2907ABU	FAIRCHILD	获取价格	PNP General Purpose Amplifier
KSP2907ABU	ONSEMI	获取价格	PNP外延硅晶体管
KSP2907A-C	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
KSP2907ACBU	FAIRCHILD	获取价格	PNP General Purpose Amplifier
KSP2907ACTA	FAIRCHILD	获取价格	PNP General Purpose Amplifier
KSP2907ACTA	ONSEMI	获取价格	PNP外延硅晶体管
KSP2907AD26Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
KSP2907AD27Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
KSP2907AD75Z	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
KSP2907AIUTA	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

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