Datasheet > KSP2907AD75Z

KSP2907AD75Z

更新时间： 2024-12-02 05:55:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	35K
描述
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

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KSP2907AD75Z 数据手册

KSP2907A

General Purpose Transistor

•

Collector-Emitter Voltage: V

Collector Power Dissipation: P (max)=625mW

Refer to KSP2907 for graphs

= 60V

CEO

TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

-60

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

-60

CEO

EBO

-5

-600

625

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

150

-55 ~ 150

°C

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

-60

-5

Typ.

Max.

Units

Collector-Base Breakdown Voltage

I = -10µA, I =0

CBO

CEO

EBO

* Collector Emitter Breakdown Voltage I = -10mA, I =0

C B

Emitter-Base Breakdown Voltage

Collector Cut-off Current

DC Current Gain

I = -10µA, I =0

= -50V, I =0

-10

CBO

I = -0.1mA, V = -10V

100

= -10V, I = -1mA,

= -10V , I = -10mA

= -10V, *I = -150mA

300

= -10V, *I = -500mA

(sat)

* Collector-Emitter Saturation Voltage

Base Emitter Saturation Voltage

Output Capacitance

I = -150mA, I = -15mA

-0.4

-1.6

I = -500mA, I = -50mA

(sat)

I = -150mA, I = -15mA

-1.3

-2.6

I = -500mA, I = -50mA

= -10V, I =0

MHz

f=1MHz

* Current Gain Bandwidth Product

Turn On Time

I = -50mA, V = -20V

200

f=100MHz

= -30V, I = -150mA

= -15mA

Turn Off Time

= -6V, I = -150mA

100

OFF

=I = -15mA

B1 B2

* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%

* Also available as and PN2907

Rev. A2, February 2002

12 3 4

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