KSC5019
Low Saturation
•
V
(sat)=0.5V at I =2A, I =50mA
CE C B
TO-92
1. Emitter 2. Collector 3. Base
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Value
Units
V
V
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
* Collector Current (Pulse)
Base Current
30
CBO
30
V
CES
CEO
EBO
10
V
6
V
I
I
I
2
A
C
5
2
A
CP
B
A
P
Collector Dissipation
Junction Temperature
Storage Temperature
750
mW
°C
°C
C
T
150
J
T
-55 ~ 150
STG
* PW≤10ms, Duty Cycle≤30%
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Test Condition
Min.
Typ.
Max.
100
Units
I
I
V
V
=30V, I =0
nA
nA
V
CBO
EBO
CB
EB
E
=6V, I =0
100
C
BV
BV
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
I =10mA, I =0
10
6
CEO
EBO
C
B
I =1mA, I =0
V
E
C
h
h
V
V
=1V, I =0.5A
140
70
600
FE1
FE2
CE
CE
C
=1V, I =2A
200
0.2
C
V
V
(sat)
(on)
Collector-Emitter Saturation Voltage
Base Emitter On Voltage
I =2A, I =50mA
0.5
1.5
V
V
CE
C
B
V
=1V, I =2A
0.86
150
27
BE
CE
CE
CB
C
f
Current Gain Bandwidth Product
Output Capacitance
V
V
=1V, I =0.5A
MHz
pF
T
C
C
=10V, I =0, f=1MHz
ob
E
h
Classification
FE
Classification
L
M
N
P
h
140 ~ 240
200 ~ 330
300 ~ 450
420 ~ 600
FE
©2000 Fairchild Semiconductor International
Rev. A, February 2000