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KSC2669Y PDF预览

KSC2669Y

更新时间: 2024-11-06 20:01:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
4页 38K
描述
Small Signal Bipolar Transistor, 0.03A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92S, 3 PIN

KSC2669Y 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-92S包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.85最大集电极电流 (IC):0.03 A
集电极-发射极最大电压:30 V配置:SINGLE
最小直流电流增益 (hFE):120JESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:NPN
最大功率耗散 (Abs):0.2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
Base Number Matches:1

KSC2669Y 数据手册

 浏览型号KSC2669Y的Datasheet PDF文件第2页浏览型号KSC2669Y的Datasheet PDF文件第3页浏览型号KSC2669Y的Datasheet PDF文件第4页 
KSC2669  
FM RADIO RF AMP, MIX, CONV, OSC, IF AMP  
High Current Gain Bandwidth Product : f =250MHz (TYP.)  
T
TO-92S  
1.Emitter 2. Collector 3. Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
35  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
30  
V
CEO  
EBO  
4
V
I
30  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
200  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
35  
30  
4
Typ.  
Max.  
Units  
BV  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
I =100µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I =5mA, I =0  
C B  
I =10µA, I =0  
V
E
C
I
I
V
=30V, I =0  
0.1  
0.1  
µA  
µA  
CBO  
EBO  
CB  
EB  
CE  
CE  
E
Emitter Cut-off Current  
V
V
V
=4V, I =0  
C
h
DC Current Gain  
=12V, I =2mA  
40  
240  
0.75  
0.4  
FE  
C
V
V
(on)  
Base-Emitter On Voltage  
=6V, I =1mA  
0.65  
0.70  
0.1  
V
V
BE  
C
(sat)  
Collector-Emitter Saturation Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I =10mA, I =1mA  
C B  
CE  
f
V
=10V, I =1mA  
100  
250  
2.0  
MHz  
pF  
T
CE  
CB  
C
C
V
=10V, I =0, f=1MHz  
3.2  
ob  
E
h
Classification  
FE  
Classification  
R
O
Y
h
40 ~ 80  
70 ~ 140  
120 ~ 240  
FE  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, September 2002  

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