是否Rohs认证: | 符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.75 | 风险等级: | 5.39 |
最大集电极电流 (IC): | 0.1 A | 集电极-发射极最大电压: | 180 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 160 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 8 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 200 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSC2682YSTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 0.1A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
KSC2688 | FAIRCHILD |
获取价格 |
Color TV Chroma Output & Video Output | |
KSC2688G | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
KSC2688-G | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
KSC2688O | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
KSC2688-O | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
KSC2688OS | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
KSC2688OSTU | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
KSC2688R | FAIRCHILD |
获取价格 |
Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
KSC2688-R | SAMSUNG |
获取价格 |
Power Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast |