Datasheet > KSC2690

KSC2690

更新时间： 2024-09-17 14:54:23

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
3页	443K
描述
TO-126

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中文翻译

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数据手册

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KSC2690 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-126 Plastic-Encapsulate Transistors

TRANSISTOR (NPN)

KSC2690A

KSC2690 /

TO-126

FEATURES

1. EMITTER

Audio Frequency Power Amplifier

High Frequency Power Amplifier

Complement to KSA1220/KSA1220A

2. COLLECTOR

3. BASE

ꢀꢁꢂꢃꢄꢅꢆ

Equivalent Circuit

C2690,C2690A,!ꢀ-ꢁꢂꢀꢃꢂo.ꢀꢃ

Solid dot= Green molding compound

device, if none, the normal device

//,ꢄode ꢀ

C2690

C2690A

ꢀ

ORDERING INFORMATION

Part Number

Package

TO-126

Packing Method

Pack Quantity

KSC2690

Bulk

200pcs/Bag

60pcs/Tube

KSC2690A

KSC2690-TU

Tube

KSC2690A-TU

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

Symbol

Parameter

Value

120

160

120

160

Unit

KSC2690

KSC2690A

KSC2690

KSC2690A

Collector-Base Voltage

Collector-Emitter Voltage

V_CBO

V_CEO

V_EBO

I_C

I_CP

I_B

Emitter-Base Voltage

Collector Current (DC)

1.2

Collector Current ( PW ≤10ms,Duty Cycle ≤2 % )

Base Current

2.5

0.3

1.25

℃

Collector Power Dissipation (T_a= 25 ℃)

Collector Power Dissipation (T_c= 25 ℃)

P_C

Operation Junction and Storage Temperature Range

-55-150

T_J,T_stg

www.jscj-elec.com

Rev. - 2.0

12 3

中文翻译

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与KSC2690相关器件

型号	品牌	获取价格	描述	数据表
KSC2690A	SAMSUNG	获取价格	NPN (AUDIO FREQUENCY, HIGH FREQUENCY POWER AMPLIFIER)
KSC2690A	FAIRCHILD	获取价格	Audio Frequency High Frequency Power Amplifier
KSC2690A	CJ	获取价格	TO-126
KSC2690A	FOSHAN	获取价格	TO-126F
KSC2690AO	FAIRCHILD	获取价格	Audio Frequency High Frequency Power Amplifier
KSC2690A-O	SAMSUNG	获取价格	Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
KSC2690AOS	FAIRCHILD	获取价格	Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
KSC2690AOSTSTU	FAIRCHILD	获取价格	Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast
KSC2690AR	FAIRCHILD	获取价格	Audio Frequency High Frequency Power Amplifier
KSC2690A-R	SAMSUNG	获取价格	Power Bipolar Transistor, 1.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast