生命周期: | Obsolete | 零件包装代码: | TO-92S |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.75 | 风险等级: | 5.77 |
最大集电极电流 (IC): | 0.03 A | 集电极-发射极最大电压: | 30 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 70 |
JESD-30 代码: | R-PSIP-T3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 250 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KSC2669OBU | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.03A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, LEAD F | |
KSC2669R | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.03A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92S | |
KSC2669-R | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 0.03A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92S | |
KSC2669Y | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.03A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92S | |
KSC2669-Y | SAMSUNG |
获取价格 |
Small Signal Bipolar Transistor, 0.03A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92S | |
KSC2669YTA | FAIRCHILD |
获取价格 |
Small Signal Bipolar Transistor, 0.03A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, LEAD F | |
KSC2682 | SAMSUNG |
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NPN(Audio Frequency Power Amplifier) | |
KSC2682 | FAIRCHILD |
获取价格 |
Audio Frequency Power Amplifier | |
KSC2682O | FAIRCHILD |
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Power Bipolar Transistor, 0.1A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast | |
KSC2682-O | SAMSUNG |
获取价格 |
暂无描述 |