KSB601OTU PDF预览

KSB601OTU

更新时间: 2025-08-27 19:02:07
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 48K
描述
元器件封装:TO-220-3;

KSB601OTU 数据手册

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KSB601  
Low Frequency Power Amplifier  
Medium Speed Switching Industrial Use  
Complement to KSD560  
TO-220  
1.Base 2.Collector 3.Emitter  
1
PNP Epitaxial Silicon Darlington Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current  
Value  
- 100  
- 100  
- 7  
Units  
V
V
CBO  
CEO  
EBO  
V
V
V
V
I
I
I
- 5  
A
C
- 8  
A
CP  
B
- 0.5  
1.5  
A
P
P
Collector Dissipation (T =25°C)  
W
W
°C  
°C  
C
a
Collector Dissipation (T =25°C)  
30  
C
C
T
T
Junction Temperature  
Storage Temperature  
150  
J
- 55 ~ 150  
STG  
* PW10ms, Duty Cycle50%  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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