Datasheet > KSA709RBU

KSA709RBU

更新时间： 2024-09-17 03:30:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	37K
描述
Small Signal Bipolar Transistor, 0.7A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

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KSA709RBU 数据手册

KSA709

High Voltage Amplifier

•

Collector-Base Voltage : V

Collector Power Dissipation : P =800mW

Complement to KSC1009

Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)

= -160V

CBO

TO-92

1. Emitter 2. Base 3. Collector

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings T =25°C unless otherwise noted

Symbol

Parameter

Ratings

-160

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

-150

CEO

EBO

-8

-700

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

800

150

-55 ~ 150

°C

STG

Electrical Characteristics T =25°C unless otherwise noted

Symbol

Parameter

Test Condition

Min.

-160

-150

-8

Typ.

Max.

Units

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

I = -100µA, I =0

CBO

CEO

EBO

I = -10mA, I =0

C B

I = -100µA, I =0

= -100V, I =0

-0.1

400

-0.4

-1.0

µA

CBO

EBO

Emitter Cut-off Current

= -5V, I =0

* DC Current Gain

= -2V, I = -50mA

(sat)

* Collector-Emitter Saturation Voltage

* Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

I = -200mA, I = -20mA

-0.3

-0.9

I = -200mA, I = -20mA

= -10V, I = -50mA

MHz

= -10V, I =0, f=1MHz

* Pulse Test: PW≤350µs, Duty cycle≤2%

Classification

70 ~ 140

120 ~ 240

200 ~ 400

Rev. B1, April 2004

12 3 4

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