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KSA733CYTA PDF预览

KSA733CYTA

更新时间: 2024-11-18 20:06:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
4页 38K
描述
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

KSA733CYTA 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.63
最大集电极电流 (IC):0.15 A集电极-发射极最大电压:50 V
配置:SINGLE最小直流电流增益 (hFE):120
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):180 MHz
Base Number Matches:1

KSA733CYTA 数据手册

 浏览型号KSA733CYTA的Datasheet PDF文件第2页浏览型号KSA733CYTA的Datasheet PDF文件第3页浏览型号KSA733CYTA的Datasheet PDF文件第4页 
KSA733  
Low Frequency Amplifier  
Collector-Base Voltage : V  
Complement to KSC945  
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)  
= -60V  
CBO  
TO-92  
1. Emitter 2. Base 3. Collector  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-60  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-50  
V
CEO  
EBO  
-5  
V
I
-150  
250  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
-60  
-50  
- 5  
Typ.  
Max.  
Units  
BV  
I = -100µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I = -10mA. I =0  
C
B
I
= -10µA. I =0  
V
E
C
I
I
V
V
V
= --60V, I =0  
-100  
-100  
700  
nA  
nA  
CBO  
EBO  
CB  
EB  
CE  
E
= -5V, I =0  
C
h
DC Current Gain  
= -6V, I = -1mA  
40  
FE  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I = -100mA, I = -10mA  
-0.18  
-0.62  
180  
2.8  
-0.3  
V
V
CE  
C
B
V
= -6V, I = -1mA  
-0.50  
50  
-0.80  
BE  
CE  
CE  
CB  
CE  
C
f
V
V
V
= -6V, I = -10mA  
MHz  
pF  
T
C
C
= -10V, I = 0, f=1MHz  
E
ob  
NF  
Noise Figure  
= -6V, I = -0.3mA  
6.0  
20  
dB  
C
f=1MHz, Rs=10kΩ  
h
Classification  
FE  
Classification  
R
O
Y
G
L
h
40 ~ 80  
70 ~ 140  
120 ~ 240  
200 ~ 400  
350 ~ 700  
FE  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, September 2002  

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