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KSA733GBU PDF预览

KSA733GBU

更新时间: 2024-11-18 13:09:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
4页 42K
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KSA733GBU 数据手册

 浏览型号KSA733GBU的Datasheet PDF文件第2页浏览型号KSA733GBU的Datasheet PDF文件第3页浏览型号KSA733GBU的Datasheet PDF文件第4页 
KSA733  
Low Frequency Amplifier  
Collector-Base Voltage : V  
Complement to KSC945  
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)  
= -60V  
CBO  
TO-92  
1. Emitter 2. Base 3. Collector  
1
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Ratings  
-60  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
CBO  
-50  
V
CEO  
EBO  
-5  
V
I
-150  
250  
mA  
mW  
°C  
C
P
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
C
T
T
150  
J
-55 ~ 150  
°C  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
-60  
-50  
- 5  
Typ.  
Max.  
Units  
BV  
I = -100µA, I =0  
V
V
CBO  
CEO  
EBO  
C
E
BV  
BV  
I = -10mA. I =0  
C
B
I
= -10µA. I =0  
V
E
C
I
I
V
V
V
= --60V, I =0  
-100  
-100  
700  
nA  
nA  
CBO  
EBO  
CB  
EB  
CE  
E
= -5V, I =0  
C
h
DC Current Gain  
= -6V, I = -1mA  
40  
FE  
C
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
Current Gain Bandwidth Product  
Output Capacitance  
I = -100mA, I = -10mA  
-0.18  
-0.62  
180  
2.8  
-0.3  
V
V
CE  
C
B
V
= -6V, I = -1mA  
-0.50  
50  
-0.80  
BE  
CE  
CE  
CB  
CE  
C
f
V
V
V
= -6V, I = -10mA  
MHz  
pF  
T
C
C
= -10V, I = 0, f=1MHz  
E
ob  
NF  
Noise Figure  
= -6V, I = -0.3mA  
6.0  
20  
dB  
C
f=1MHz, Rs=10kΩ  
h
Classification  
FE  
Classification  
R
O
Y
G
L
h
40 ~ 80  
70 ~ 140  
120 ~ 240  
200 ~ 400  
350 ~ 700  
FE  
©2002 Fairchild Semiconductor Corporation  
Rev. A2, September 2002  

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