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KSA709YJ18Z PDF预览

KSA709YJ18Z

更新时间: 2024-11-21 13:51:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器晶体管
页数 文件大小 规格书
3页 81K
描述
Small Signal Bipolar Transistor, 0.7A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN

KSA709YJ18Z 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.71
最大集电极电流 (IC):0.7 A集电极-发射极最大电压:150 V
配置:SINGLE最小直流电流增益 (hFE):120
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):50 MHz
Base Number Matches:1

KSA709YJ18Z 数据手册

 浏览型号KSA709YJ18Z的Datasheet PDF文件第2页浏览型号KSA709YJ18Z的Datasheet PDF文件第3页 
KSA709  
PNP EPITAXIAL SILICON TRANSISTOR  
HIGH VOLTAGE AMPLIFIER  
· Collector-Base Voltage: VCBO= -160V  
· Collector Dissipation: PC=800mW  
· Complement to KSC1009  
TO-92  
ABSOLUTE MAXIMUM RATINGS (TA=25°C)  
Characteristic  
Symbol  
Rating  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
VCBO  
VCEO  
VEBO  
IC  
PC  
TJ  
-160  
-150  
-8  
-700  
800  
150  
-55 ~ 150  
V
V
V
mA  
mW  
°C  
°C  
TSTG  
1. Emitter 2. Base 3. Collector  
ELECTRICAL CHARACTERISTICS (TA=25°C)  
Characteristic  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
IC= -100mA, IE=0  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
BVCBO  
-160  
-150  
-8  
V
V
V
mA  
mA  
IC= -10mA, IB=0  
IE= -100mA, IC=0  
VCB= -100V, IE=0  
VEB= -5V, IC=0  
BVCEO  
BVEBO  
ICBO  
IEBO  
hFE  
-0.1  
-0.1  
400  
-0.4  
-1.0  
VCE= -2V, IC= -50mA*  
40  
IC= -200mA, IB= -20mA*  
IC= -200mA, IC= -20mA*  
VCE= -10V, IC= -50mA  
VCB= -10V, IE=0  
V
V
MHz  
pF  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
Current-Gain-Bandwidth Product  
Output Capacitance  
VCE (sat)  
VBE (sat)  
fT  
-0.3  
-0.9  
50  
COB  
10  
f=1MHz  
* Pulse Test: PW£350ms, Duty cycle£2%  
hFE CLASSIFICATION  
Classification  
R
O
Y
G
hFE  
40-80  
70-140  
120-240  
200-400  
Rev. B  
ã
1999 Fairchild Semiconductor Corporation  

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