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KSA1182 PDF预览

KSA1182

更新时间: 2024-01-16 13:15:04
品牌 Logo 应用领域
金誉半导体 - HTSEMI 晶体晶体管光电二极管放大器
页数 文件大小 规格书
2页 456K
描述
TRANSISTOR (PNP)

KSA1182 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:1 week风险等级:5.48
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):120
JESD-30 代码:R-PDSO-G3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
最大功率耗散 (Abs):0.15 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

KSA1182 数据手册

 浏览型号KSA1182的Datasheet PDF文件第2页 
KSA1182  
TRANSISTOR (PNP)  
SOT-23  
FEATURES  
Complement to KSC2859  
1. BASE  
2. EMITTER  
3. COLLECTOR  
MAXIMUM RATINGS (TA=25unless otherwise noted)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Value  
-35  
Units  
V
-30  
V
-5  
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
-0.5  
A
PC  
150  
mW  
Tj  
150  
Tstg  
Storage Temperature  
-55-150  
ELECTRICAL CHARACTERISTICS (Tamb=25℃  
unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
MIN  
-35  
-30  
-5  
TYP  
MAX  
UNIT  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
V(BR)CBO IC=-100μA, IE=0  
V(BR)CEO IC=-1mA, IB=0  
V(BR)EBO IE=-100μA, IC=0  
V
V
V
ICBO  
IEBO  
VCB=-35V, IE=0  
-0.1  
-0.1  
240  
μA  
μA  
Emitter cut-off current  
VEB=-5V, IC=0  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE  
VCE=-1V, IC=-100mA  
VCE=-6V, IC=-400mA  
IC=-100mA, IB=-10mA  
VCE=-1V, IC=-100mA  
VCE=-6V, IC=-20mA  
VCB=-6V, IE=0, f=1MHz  
70  
25  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter voltage  
-0.25  
-1.0  
V
V
Transition frequency  
fT  
200  
13  
MHz  
pF  
Collector output capacitance  
Cob  
CLASSIFICATION OF hFE(1)  
Rank  
O
Y
Range  
70-140  
F1O  
120-240  
Marking  
F1Y  
1
JinYu  
semiconductor  
www.htsemi.com  
Date:2011/05  

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