Datasheet > KSA1201

KSA1201

更新时间： 2024-09-23 12:46:31

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描述
Collector-Emitter Voltage: VCEO= -120V

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中文翻译

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数据手册

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KSA1201 数据手册

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TTT

Transistor

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nnn

sss

iii

sss

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rrr

sss

Product specification

KSA1201

Features

Collector-Emitter Voltage: V^CEO= -120V

f^T=120MHz

Collector Power Dissipation P^C=1 to 2W : Mounted on Ceramic Board

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-120

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

-120

-5

-800

Base Current

I^B

-160

P^C

500

Collector Power Dissipation

P^C*

1,000

150

Junction Temperature

Storage Temperature

T^J

T^STG

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Symbol

B^VCEO

B^VEBO

ICBO

Testconditons

Min

Typ

Max

Unit

I^C= -10mA, I^B=0

120

-5

I^E= -1mA, I^C=0

VCB= -120V, IE=0

-100

240

-1.0

Emitter Cut-off Current

I^EBO

V^BE= -5V, I^C=0

DC Current Gain

hFE

VCE= -5V, IC= -100mA

I^C= -500mA, I^B=-50mA

V^CE= -5V, I^C= -500mA

VCE= -5V, IC= -100mA

V^CB= -10V, I^E=0, f=1MHz

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

Current Gain Bandwidth Product

Output Capacitance

V^{CE (sat)}

V^{BE (on)}

120

MHz

C^ob

hFE Classification

Marking

Rank

SDO

SDY

Type

80 160

120 240

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