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KSA1201_05 PDF预览

KSA1201_05

更新时间: 2024-01-01 15:43:32
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管
页数 文件大小 规格书
5页 426K
描述
PNP Epitaxial Silicon Transistor

KSA1201_05 数据手册

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July 2005  
KSA1201  
PNP Epitaxial Silicon Transistor  
Power Amplifier  
Collector-Emitter Voltage: VCEO= -120V  
fT=120MHz  
Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board  
Complement to KSC2881  
Marking  
1 2  
P Y  
0 1  
W W  
SOT-89  
1
1. Base 2. Collector 3. Emitter  
Weekly code  
Year code  
hFE grage  
Absolute Maximum Ratings Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
Ratings  
-120  
Units  
VCBO  
Collector Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
VCEO  
VEBO  
IC  
-120  
V
-5  
V
-800  
mA  
mA  
IB  
Base Current  
-160  
PC  
PC*  
Collector Power Dissipation  
500  
1,000  
mW  
mW  
TJ  
Junction Temperature  
Storage Temperature  
150  
°C  
°C  
TSTG  
-55 ~ 150  
* Mounted on Ceramic Board (250mm2 x 0.8mm)  
Electrical Characteristics Ta = 25°C unless otherwise noted  
Symbol  
BVCEO  
BVEBO  
ICBO  
Parameter  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Test Condition  
Min.  
Typ.  
Max.  
Units  
IC = -10mA, IB = 0  
-120  
V
IE = -1mA, IC = 0  
-5  
V
VCB = -120V, IE = 0  
VBE = -5V, IC = 0  
-100  
-100  
240  
-1.0  
-1.0  
nA  
nA  
IEBO  
Emitter Cut-off Current  
hFE  
DC Current Gain  
VCE = -5V, IC = -100mA  
80  
V
V
CE (sat)  
BE (on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
IC = -500mA, IB = -50mA  
VCE = -5V, IC = -500mA  
VCE = -5V, IC = -100mA  
VCB = -10V, IE = 0, f = 1MHz  
V
V
fT  
Current Gain Bandwidth Product  
Output Capacitance  
120  
MHz  
pF  
Cob  
30  
©2005 Fairchild Semiconductor Corporation  
KSA1201 Rev. B2  
1
www.fairchildsemi.com  

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