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KRC852E PDF预览

KRC852E

更新时间: 2024-09-14 22:47:31
品牌 Logo 应用领域
KEC 晶体开关晶体管光电二极管驱动局域网
页数 文件大小 规格书
6页 115K
描述
EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)

KRC852E 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
针数:6Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.74Is Samacsys:N
其他特性:BUILT-IN BIAS RESISTOR RATIO IS 1最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):50JESD-30 代码:R-PDSO-F6
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

KRC852E 数据手册

 浏览型号KRC852E的Datasheet PDF文件第2页浏览型号KRC852E的Datasheet PDF文件第3页浏览型号KRC852E的Datasheet PDF文件第4页浏览型号KRC852E的Datasheet PDF文件第5页浏览型号KRC852E的Datasheet PDF文件第6页 
SEMICONDUCTOR  
KRC851E~KRC856E  
EPITAXIAL PLANAR NPN TRANSISTOR  
TECHNICAL DATA  
SWITCHING APPLICATION.  
B
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.  
B1  
FEATURES  
With Built-in Bias Resistors.  
Simplify Circuit Design.  
1
2
3
6
5
DIM MILLIMETERS  
_
A
A1  
B
1.6+0.05  
_
1.0+0.05  
Reduce a Quantity of Parts and Manufacturing Process.  
High Packing Density.  
_
1.6+0.05  
_
B1  
C
D
H
J
1.2+0.05  
0.50  
4
_
0.2+0.05  
_
0.5+0.05  
_
0.12+0.05  
P
P
P
5
EQUIVALENT CIRCUIT  
OUT  
BIAS RESISTOR VALUES  
TYPE NO.  
KRC851E  
KRC852E  
KRC853E  
KRC854E  
KRC855E  
KRC856E  
R1(k) R2(k)  
4.7  
10  
4.7  
10  
22  
47  
47  
47  
1. Q COMMON (EMITTER)  
1
R1  
IN  
2. Q IN (BASE)  
1
3. Q OUT (COLLECTOR)  
2
22  
R2  
4. Q COMMON (EMITTER)  
2
5. Q IN (BASE)  
2
6. Q OUT (COLLECTOR)  
47  
1
2.2  
4.7  
COMMON  
TES6  
EQUIVALENT CIRCUIT (TOP VIEW)  
6
5
4
Q1  
Q2  
1
2
3
MAXIMUM RATING (Ta=25)  
CHARACTERISTIC  
SYMBOL  
VO  
RATING  
50  
UNIT  
V
Output Voltage  
KRC851E856E  
KRC851E  
20, -10  
30, -10  
40, -10  
40, -10  
12, -5  
20, -5  
100  
KRC852E  
KRC853E  
VI  
Input Voltage  
V
KRC854E  
KRC855E  
KRC856E  
IO  
PD*  
Tj  
Output Current  
mA  
mW  
Power Dissipation  
Junction Temperature  
Storage Temperature Range  
* Total Rating.  
200  
KRC851E856E  
150  
Tstg  
-55150  
Marking  
Type Name  
6
5
4
3
MARK SPEC  
TYPE  
KRC851E KRC852E KRC853E KRC854E KRC855E KRC856E  
MARK  
NA NB NC ND NE NF  
1
2
2002. 1. 24  
Revision No : 1  
1/6  

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