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KRA316_08

更新时间: 2024-11-23 11:31:27
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
1页 19K
描述
USM PACKAGE

KRA316_08 数据手册

  
SEMICONDUCTOR  
MARKING SPECIFICATION  
KRA313  
USM PACKAGE  
1. Marking method  
Laser Marking  
2. Marking  
2
1
PO  
No.  
Item  
Marking  
Description  
KRA313  
-
Device Mark  
hFE Grade  
PO  
-
2006. 1st Week  
[0:1st Character, 1:2nd Character]  
* Lot No.  
01  
Note) * Lot No. marking method  
1
(A)  
2
(B)  
3
(C)  
4
(D)  
5
(E)  
6
(F)  
7
(G)  
8
(H)  
9
(I)  
0
(J)  
1 st Character  
Character  
arrangement  
A
(1)  
B
(2)  
C
(3)  
D
(4)  
E
(5)  
F
(6)  
G
(7)  
H
(8)  
I
(9)  
J
(0)  
2nd Character  
Year  
Marking (Week)  
Periode (Year)  
Remark  
1 st Year (2006)  
2 nd Year (2007)  
4 rd Year (2008)  
4 th Year (2009)  
01  
0A  
J1  
02  
51  
5A  
E1  
EA  
52  
5B  
E2  
EB  
2006-2010-2014...  
2007-2011-2015...  
2008-2012-2016...  
2009-2013-2017...  
0B  
J2  
Rotation for 4 years  
JA  
JB  
2008. 8. 29  
Revision No : 1  
1/1  

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