5秒后页面跳转
KMM466S1723AT2-G0 PDF预览

KMM466S1723AT2-G0

更新时间: 2023-04-15 00:00:00
品牌 Logo 应用领域
三星 - SAMSUNG 动态存储器
页数 文件大小 规格书
10页 128K
描述
Synchronous DRAM Module, 16MX64, 7ns, CMOS

KMM466S1723AT2-G0 数据手册

 浏览型号KMM466S1723AT2-G0的Datasheet PDF文件第2页浏览型号KMM466S1723AT2-G0的Datasheet PDF文件第3页浏览型号KMM466S1723AT2-G0的Datasheet PDF文件第4页浏览型号KMM466S1723AT2-G0的Datasheet PDF文件第5页浏览型号KMM466S1723AT2-G0的Datasheet PDF文件第6页浏览型号KMM466S1723AT2-G0的Datasheet PDF文件第7页 
KMM466S1723AT2  
PC66 SODIMM  
Revision History  
Revision 0.0 (July 5, 1999)  
• Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER.  
• Skip ICC4 value of CL=2 in DC characteristics in datasheet.  
• Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.  
• Eliminated FREQUENCY vs.PARAMETER RELATIONSHIP TABLE.  
• Symbol Change Notice  
Before  
After  
I
I
I
Input leakage current (inputs)  
IL  
I
Input leakage current  
LI  
Input leakage current (I/O pins)  
IL  
Output open @ DC characteristic table  
Io  
Output open @ DC characteristic table  
OL  
Test Condition in DC CHARACTERISTIC Change Notice  
Symbol  
Before  
CKE £ VIL(max), tCC = 15ns  
CKE ³ VIH(min), CS ³ VIH(min), tCC = 15ns  
After  
I
I
I
CKE £ VIL(max), tCC = 10ns  
CC2P , CC3P  
I
CKE ³ VIH(min), CS ³ VIH(min), tCC = 10ns  
CC2N , CC3N  
Input signals are changed one time during 30ns  
Input signals are changed one time during 20ns  
I
2 Banks activated  
4 Banks activated  
CC4  
• Added Notes @OPERATING AC PARAMETER  
Notes : 5. For -0, tRDL=1CLK and tDAL=1CLK+20ns is also supported .  
SAMSUNG recommends tRDL=2CLK and tDAL=2CLK + 20ns.  
REV. 0.0 July 1999  

与KMM466S1723AT2-G0相关器件

型号 品牌 获取价格 描述 数据表
KMM466S1724BT2-F0 SAMSUNG

获取价格

Synchronous DRAM Module, 16MX64, 7ns, CMOS
KMM466S1724BT2-G0 SAMSUNG

获取价格

Synchronous DRAM Module, 16MX64, 7ns, CMOS
KMM466S404BT-FL SAMSUNG

获取价格

Synchronous DRAM Module, 4MX64, 6ns, CMOS
KMM466S424BT-F0 SAMSUNG

获取价格

Synchronous DRAM Module, 4MX64, 7ns, CMOS
KMM466S424CT-F0 SAMSUNG

获取价格

Synchronous DRAM Module, 4MX64, 7ns, CMOS
KMM466S424CT-F00 SAMSUNG

获取价格

DRAM Module, 4MX64, CMOS, SODIMM-144
KMM466S424DT-F0 SAMSUNG

获取价格

Synchronous DRAM Module, 4MX64, 7ns, CMOS
KMM466S424DT-G0 SAMSUNG

获取价格

Synchronous DRAM Module, 4MX64, 7ns, CMOS
KMM466S803AT2-F2 SAMSUNG

获取价格

Synchronous DRAM Module, 8MX64, 8ns, CMOS, PDMA144
KMM466S803AT2-F8 SAMSUNG

获取价格

Synchronous DRAM Module, 8MX64, 6ns, CMOS, PDMA144