Datasheet > KMB2D0N60SA_08

KMB2D0N60SA_08

更新时间： 2022-03-17 19:32:29

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描述
N-Ch Trench MOSFET

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KMB2D0N60SA_08 数据手册

SEMICONDUCTOR

KMB2D0N60SA

TECHNICAL DATA

N-Ch Trench MOSFET

General Description

This Trench MOSFET has better characteristics, such as fast switching

time, low on resistance, low gate charge and excellent avalanche

characteristics. It is mainly suitable for portable equipment.

DIM MILLIMETERS

2.93 0.20

1.30+0.20/-0.15

1.30 MAX

0.40+0.15/-0.05

2.40+0.30/-0.20

1.90

FEATURES

V_DSS=60V, I_D=2A

Drain-Source ON Resistance

R_DS(ON)=160m (Max.) @ V_GS=10V

R_DS(ON)=220m (Max.) @ V_GS=4.5V

Super High Dense Cell Design

0.95

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

0.20 MIN

1.00+0.20/-0.10

SOT-23

MAXIMUM RATING (Ta=25

)

CHARACTERISTIC

Drain-Source Voltage

SYMBOL

V_DSS

N-Ch

UNIT

V_GSS

Gate-Source Voltage

2.0

DC@Ta=25

DC@Ta=70

Pulsed

I_D

Drain Current

1.6

I_DP

I_S

Drain-Source-Diode Forward Current

1.0

KND

1.25

0.8

Ta=25

P_D

Drain Power Dissipation

Ta=70

Maximum Junction Temperature

Storage Temperature Range

T_j

150

T_stg

-55 150

100

R_thJA

Thermal Resistance, Junction to Ambient

Note>*Surface Mounted on 1” × 1” FR4 Board, t≤ 5sec

PIN CONNECTION (TOP VIEW)

2008. 2. 25

Revision No : 1

1/5

12 3 4 5

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