Datasheet > KM736FV4021

KM736FV4021

更新时间： 2024-11-14 22:20:31

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器
页数	文件大小	规格书
12页	352K
描述
128Kx36 & 256Kx18 Synchronous Pipelined SRAM

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KM736FV4021 数据手册

KM736FV4021

KM718FV4021

128Kx36 & 256Kx18 SRAM

Document Title

128Kx36 & 256Kx18 Synchronous Pipelined SRAM

Revision History

Draft Date

Remark

Rev. No.

Rev. 0.0

Rev. 0.1

History

Preliminary

- Preliminary specification release

- Change specification format.

No change was made in parameters.

April, 1997

Jan. 1998

Preliminary

Final

- Updated IDD, ISB and Input High Level.

Updated tKHKL, tKLKH, tKHQX, tKHQX1 and AC Test Conditions.

For JTAG, updated Vendor Definition and added tSVCH/tCHSX.

Rev. 0.2

Rev. 1.0

- Final specification release

Dec. 1998

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.

Rev 1.0

Dec. 1998

- 1 -

12 3 4 5 6 7...12

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型号	品牌	获取价格	描述	数据表
KM736FV4021H-5	SAMSUNG	获取价格	128Kx36 & 256Kx18 Synchronous Pipelined SRAM
KM736FV4021H-6	SAMSUNG	获取价格	128Kx36 & 256Kx18 Synchronous Pipelined SRAM
KM736FV4021H-7	SAMSUNG	获取价格	128Kx36 & 256Kx18 Synchronous Pipelined SRAM
KM736FV4022H-65	SAMSUNG	获取价格	Standard SRAM, 128KX36, 6.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
KM736FV4022H-7	SAMSUNG	获取价格	Standard SRAM, 128KX36, 7ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
KM736FV4022H-75	SAMSUNG	获取价格	Standard SRAM, 128KX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119
KM736N	FRONTIER	获取价格	10mm Adjustable Shielded RF Coil (I)
KM736N-LFR	FRONTIER	获取价格	10mm Adjustable Shielded RF Coil (I)
KM736S4017H-5	SAMSUNG	获取价格	Standard SRAM, 128KX36, 2.7ns, CMOS, PBGA153, 14 X 22 MM, BGA-153
KM736S8011H-4000	SAMSUNG	获取价格	Standard SRAM, 256KX36, 2ns, CMOS, PBGA119, 14 X 22 MM, BGA-119