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KM736FV4021H-5 PDF预览

KM736FV4021H-5

更新时间: 2024-11-14 22:10:51
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器
页数 文件大小 规格书
12页 352K
描述
128Kx36 & 256Kx18 Synchronous Pipelined SRAM

KM736FV4021H-5 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BGA包装说明:BGA, BGA119,7X17,50
针数:119Reach Compliance Code:unknown
ECCN代码:3A991.B.2.AHTS代码:8542.32.00.41
风险等级:5.92最长访问时间:2.5 ns
其他特性:BYTE WRITE; POWER DOWNI/O 类型:COMMON
JESD-30 代码:R-PBGA-B119JESD-609代码:e0
长度:22 mm内存密度:4718592 bit
内存集成电路类型:STANDARD SRAM内存宽度:36
功能数量:1端子数量:119
字数:131072 words字数代码:128000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:128KX36
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:BGA封装等效代码:BGA119,7X17,50
封装形状:RECTANGULAR封装形式:GRID ARRAY
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:2.5,3.3 V认证状态:Not Qualified
最大待机电流:0.06 A最小待机电流:3.15 V
子类别:SRAMs最大压摆率:0.65 mA
最大供电电压 (Vsup):3.45 V最小供电电压 (Vsup):3.15 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:BALL
端子节距:1.27 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:14 mm
Base Number Matches:1

KM736FV4021H-5 数据手册

 浏览型号KM736FV4021H-5的Datasheet PDF文件第2页浏览型号KM736FV4021H-5的Datasheet PDF文件第3页浏览型号KM736FV4021H-5的Datasheet PDF文件第4页浏览型号KM736FV4021H-5的Datasheet PDF文件第5页浏览型号KM736FV4021H-5的Datasheet PDF文件第6页浏览型号KM736FV4021H-5的Datasheet PDF文件第7页 
KM736FV4021  
KM718FV4021  
128Kx36 & 256Kx18 SRAM  
Document Title  
128Kx36 & 256Kx18 Synchronous Pipelined SRAM  
Revision History  
Draft Date  
Remark  
Rev. No.  
Rev. 0.0  
Rev. 0.1  
History  
Preliminary  
Preliminary  
- Preliminary specification release  
- Change specification format.  
No change was made in parameters.  
April, 1997  
Jan. 1998  
Preliminary  
Final  
- Updated IDD, ISB and Input High Level.  
Updated tKHKL, tKLKH, tKHQX, tKHQX1 and AC Test Conditions.  
For JTAG, updated Vendor Definition and added tSVCH/tCHSX.  
Rev. 0.2  
Rev. 1.0  
- Final specification release  
Dec. 1998  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the  
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-  
tions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.  
Rev 1.0  
Dec. 1998  
- 1 -  

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