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KM736S8011H-5000 PDF预览

KM736S8011H-5000

更新时间: 2024-11-15 15:36:27
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器内存集成电路
页数 文件大小 规格书
13页 314K
描述
Standard SRAM, 256KX36, 2.5ns, CMOS, PBGA119, 14 X 22 MM, BGA-119

KM736S8011H-5000 技术参数

生命周期:Active包装说明:BGA,
Reach Compliance Code:compliantHTS代码:8542.32.00.41
风险等级:5.8最长访问时间:2.5 ns
其他特性:PIPELINED ARCHITECTURE, SEATED HT-CALCULATEDJESD-30 代码:R-PBGA-B119
长度:22 mm内存密度:9437184 bit
内存集成电路类型:STANDARD SRAM内存宽度:36
功能数量:1端子数量:119
字数:262144 words字数代码:256000
工作模式:SYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:256KX36
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装形状:RECTANGULAR封装形式:GRID ARRAY
并行/串行:PARALLEL座面最大高度:2.2 mm
最大供电电压 (Vsup):2.65 V最小供电电压 (Vsup):2.35 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:BALL端子节距:1.27 mm
端子位置:BOTTOM宽度:14 mm
Base Number Matches:1

KM736S8011H-5000 数据手册

 浏览型号KM736S8011H-5000的Datasheet PDF文件第2页浏览型号KM736S8011H-5000的Datasheet PDF文件第3页浏览型号KM736S8011H-5000的Datasheet PDF文件第4页浏览型号KM736S8011H-5000的Datasheet PDF文件第5页浏览型号KM736S8011H-5000的Datasheet PDF文件第6页浏览型号KM736S8011H-5000的Datasheet PDF文件第7页 
KM736S8011  
KM718S8011  
256Kx36 & 512Kx18 SRAM  
Document Title  
256Kx36 & 512Kx18 Synchronous Pipelined SRAM  
Revision History  
Draft Date  
Remark  
Rev. No.  
History  
Mar. 1999  
Nov. 1999  
Preliminary  
Final  
Rev. 0.0  
Rev. 1.0  
- Preliminary specification release  
- Final specification release  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters  
of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters.  
Rev 1.0  
Nov. 1999  
1

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