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KM616U4000CLRI-8L0 PDF预览

KM616U4000CLRI-8L0

更新时间: 2024-11-11 08:16:07
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管
页数 文件大小 规格书
9页 154K
描述
Standard SRAM, 256KX16, 85ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44

KM616U4000CLRI-8L0 数据手册

 浏览型号KM616U4000CLRI-8L0的Datasheet PDF文件第2页浏览型号KM616U4000CLRI-8L0的Datasheet PDF文件第3页浏览型号KM616U4000CLRI-8L0的Datasheet PDF文件第4页浏览型号KM616U4000CLRI-8L0的Datasheet PDF文件第5页浏览型号KM616U4000CLRI-8L0的Datasheet PDF文件第6页浏览型号KM616U4000CLRI-8L0的Datasheet PDF文件第7页 
KM616V4000C, KM616U4000C Family  
CMOS SRAM  
Document Title  
256Kx16 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No History  
Draft Date  
Remark  
0.0  
Initial draft  
January 13, 1998  
Advance  
0.1  
Revised  
June 12, 1998  
Preliminary  
- Speed bin change  
Commercial : 70/85ns ® 70/85/100ns  
Industrial : 85/100ns ® 70/85/100ns  
- DC Characteristics change  
ICC : 5mA at read/write ® 4mA at read  
ICC1 : 5mA ® 6mA  
ICC2 : 50mA ® 45mA  
ISB : 0.5mA ® 0.3mA  
ISB1 : 10mA ® 15mA for commercial parts  
Errata correction  
0.11  
1.0  
August 13, 1998  
Finalize  
November 16, 1998  
Final  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
1
Revision 1.0  
November 1998  

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