Datasheet > KM616U4000CLRI-8L0

KM616U4000CLRI-8L0

更新时间： 2023-02-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管
页数	文件大小	规格书
9页	154K
描述
Standard SRAM, 256KX16, 85ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44

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KM616U4000CLRI-8L0 数据手册

KM616V4000C, KM616U4000C Family

CMOS SRAM

Document Title

256Kx16 bit Low Power and Low Voltage CMOS Static RAM

Revision History

Revision No History

Draft Date

Remark

0.0

Initial draft

January 13, 1998

Advance

0.1

Revised

June 12, 1998

Preliminary

- Speed bin change

Commercial : 70/85ns ® 70/85/100ns

Industrial : 85/100ns ® 70/85/100ns

- DC Characteristics change

ICC : 5mA at read/write ® 4mA at read

ICC1 : 5mA ® 6mA

ICC2 : 50mA ® 45mA

ISB : 0.5mA ® 0.3mA

ISB1 : 10mA ® 15mA for commercial parts

Errata correction

0.11

1.0

August 13, 1998

Finalize

November 16, 1998

Final

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 1.0

November 1998

12 3 4 5 6 7...9

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型号	品牌	描述	获取价格	数据表
KM616U4000CLT-10L0	SAMSUNG	Standard SRAM, 256KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44	获取价格
KM616U4000CLTI-7L0	SAMSUNG	Standard SRAM, 256KX16, 70ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44	获取价格
KM616U4000CLTI-8L0	SAMSUNG	Standard SRAM, 256KX16, 85ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44	获取价格
KM616U4010CLZI-8L0	SAMSUNG	Standard SRAM, 256KX16, 85ns, CMOS, PBGA48, 0.75 MM PITCH, CSP-48	获取价格
KM616U4110CLZI-8L	SAMSUNG	Standard SRAM, 256KX16, 85ns, CMOS, PBGA48, 0.75 MM PITCH, MICRO, BGA-48	获取价格
KM616V1000BLRI-10L	SAMSUNG	Standard SRAM, 64KX16, 100ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44	获取价格