Datasheet > KM616FU2010AZI-10

KM616FU2010AZI-10

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KM616FU2010AZI-10 数据手册

KM616FU2010A Family

CMOS SRAM

Document Title

128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Revision History

Revision No. History

Draft Date

Remark

0.0

1.0

Initial Draft

May 20, 1998

Advance

Finalize

November 17, 1998 Final

- IDR test condition change : Vcc=1.5V to Vcc=1.2V

- 48-CSP package dimension change

Die thickness : 0.32mm ® 0.45mm

E : 0.80mm ® 0.93mm

E1 : 0.55mm ® 0.68mm

2.0

Revise

May 12, 1999

Final

- Change VDR 1.0V to 1.5V

- Change IDR test condition ; VCC=1.2V to 1.5V

- Change ICC2 45mA to 35mA

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

- 1 -

Revision 2.0

May 1999

12 3 4 5 6 7...9

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型号	品牌	获取价格	描述	数据表
KM616FU4010ZI-10	SAMSUNG	获取价格	Standard SRAM, 512KX8, 100ns, CMOS, PBGA48, 8.20 X 8.70 MM, MICRO, BGA-48
KM616FU4010ZI-7	SAMSUNG	获取价格	Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, 8.20 X 8.70 MM, MICRO, BGA-48
KM616FU4110ZI-7	SAMSUNG	获取价格	Standard SRAM, 256KX16, 70ns, CMOS, PBGA48, 8.20 X 8.70 MM, MICRO, BGA-48
KM616FU8000R-5	SAMSUNG	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44
KM616FU8000RI-5	SAMSUNG	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44
KM616FU8000RI-7	SAMSUNG	获取价格	Standard SRAM, 512KX16, 70ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44
KM616FU8000TI-5	SAMSUNG	获取价格	Standard SRAM, 512KX16, 55ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
KM616FU8000TI-7	SAMSUNG	获取价格	Standard SRAM, 512KX16, 70ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
KM616FU8110FI-7	SAMSUNG	获取价格	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, 8 X 12 MM, 0.75 MM PITCH, FBGA-48
KM616FU8110FI-70	SAMSUNG	获取价格	Standard SRAM, 512KX16, 70ns, CMOS, PBGA48, 8 X 12 MM, 0.75 MM PITCH, FBGA-48