Datasheet > KM616S2000LTI-15L0

KM616S2000LTI-15L0

更新时间： 2024-11-08 20:05:55

品牌	Logo	应用领域
三星 - SAMSUNG		静态存储器光电二极管内存集成电路
页数	文件大小	规格书
9页	135K
描述
Standard SRAM, 128KX16, 150ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

KM616S2000LTI-15L0 技术参数

KM616S2000 Family

CMOS SRAM

Document Title

128K x16 bit Low Power and Low Voltage CMOS Static RAM

Revision History

Revision No. History

Draft Data

Remark

0.0

Initial Draft

October 1, 1997

Preliminary

1.0

Finalize

August 27, 1998

Final

- Change operation voltage:

Vcc=2.3~3.3V ® Vcc=2.3~2.7V

- Release operating current

ICC=2mA ® 5mA

ICC1 Read/Write=3/15mA ® 5/20mA

The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.

Revision 1.0

August 1998

12 3 4 5 6 7...9

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
KM616S4000CLRI-10L	SAMSUNG	获取价格	Standard SRAM, 256KX16, 100ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44
KM616S4000CLRI-12L	SAMSUNG	获取价格	Standard SRAM, 256KX16, 120ns, CMOS, PDSO44, 0.400 INCH, REVERSE, TSOP2-44
KM616S4000CLTI-10L	SAMSUNG	获取价格	Standard SRAM, 256KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
KM616S4000CLTI-12L	SAMSUNG	获取价格	Standard SRAM, 256KX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
KM616S4110CLZI-12L	SAMSUNG	获取价格	Standard SRAM, 256KX16, 120ns, CMOS, PBGA48, 0.75 MM PITCH, CSP-48
KM616U1000BLTI-10	SAMSUNG	获取价格	Standard SRAM, 64KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
KM616U1000BLTI-10L	SAMSUNG	获取价格	Standard SRAM, 64KX16, 100ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44
KM616U4000ALR-10	SAMSUNG	获取价格	Standard SRAM, 256KX16, 100ns, CMOS, PDSO44
KM616U4000ALR-7L	SAMSUNG	获取价格	Standard SRAM, 256KX16, 70ns, CMOS, PDSO44
KM616U4000ALR-8	SAMSUNG	获取价格	Standard SRAM, 256KX16, 85ns, CMOS, PDSO44