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KM616S2000LTI-12L0 PDF预览

KM616S2000LTI-12L0

更新时间: 2024-11-10 20:05:55
品牌 Logo 应用领域
三星 - SAMSUNG 静态存储器光电二极管内存集成电路
页数 文件大小 规格书
9页 135K
描述
Standard SRAM, 128KX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44

KM616S2000LTI-12L0 技术参数

生命周期:Obsolete零件包装代码:TSOP2
包装说明:TSOP2,针数:44
Reach Compliance Code:unknownECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:120 nsJESD-30 代码:R-PDSO-G44
长度:18.41 mm内存密度:2097152 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:44
字数:131072 words字数代码:128000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:128KX16
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:1.2 mm最大供电电压 (Vsup):2.7 V
最小供电电压 (Vsup):2.3 V标称供电电压 (Vsup):2.5 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
宽度:10.16 mmBase Number Matches:1

KM616S2000LTI-12L0 数据手册

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KM616S2000 Family  
CMOS SRAM  
Document Title  
128K x16 bit Low Power and Low Voltage CMOS Static RAM  
Revision History  
Revision No. History  
Draft Data  
Remark  
0.0  
Initial Draft  
October 1, 1997  
Preliminary  
1.0  
Finalize  
August 27, 1998  
Final  
- Change operation voltage:  
Vcc=2.3~3.3V ® Vcc=2.3~2.7V  
- Release operating current  
ICC=2mA ® 5mA  
ICC1 Read/Write=3/15mA ® 5/20mA  
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and  
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.  
Revision 1.0  
August 1998  

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