KM416S4030CT-FLK

更新时间： 2024-09-13 13:09:07

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KM416S4030CT-FLK 数据手册

Preliminary

CMOS SDRAM

KM416S4030C

Revision History

Revision 1 (May 1998)

- ICC2N value (10mA) is changed to 12mA.

Revision .2 (June 1998)

- tSH (-10 binning) is revised.

REV. 2 June '98

12 3 4 5 6 7...11

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型号	品牌	获取价格	描述	数据表
KM416S4030CT-G	SAMSUNG	获取价格	1M x 16Bit x 4 Banks Synchronous DRAM
KM416S4030CT-G8	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
KM416S4030CT-GHK	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54
KM416S4030CT-GHKZ	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54
KM416S4030CT-GL	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
KM416S4030CT-GLZ	SAMSUNG	获取价格	暂无描述
KM416S4031BT-G8	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TS
KM416S4031BT-GS	SAMSUNG	获取价格	Synchronous DRAM, 4MX16, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-5
KM416S8030	SAMSUNG	获取价格	2M x 16Bit x 4 Banks Synchronous DRAM
KM416S8030AT-G/FH	SAMSUNG	获取价格	Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54