是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | TSOP, TSOP54,.46,32 | Reach Compliance Code: | unknown |
风险等级: | 5.92 | 最长访问时间: | 6 ns |
最大时钟频率 (fCLK): | 100 MHz | I/O 类型: | COMMON |
交错的突发长度: | 1,2,4,8 | JESD-30 代码: | R-PDSO-G54 |
JESD-609代码: | e0 | 内存密度: | 67108864 bit |
内存集成电路类型: | SYNCHRONOUS DRAM | 内存宽度: | 16 |
端子数量: | 54 | 字数: | 4194304 words |
字数代码: | 4000000 | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 4MX16 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TSOP | 封装等效代码: | TSOP54,.46,32 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE, THIN PROFILE |
电源: | 3.3 V | 认证状态: | Not Qualified |
刷新周期: | 4096 | 连续突发长度: | 1,2,4,8,FP |
最大待机电流: | 0.001 A | 子类别: | DRAMs |
最大压摆率: | 0.125 mA | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子节距: | 0.8 mm |
端子位置: | DUAL | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KM416S4030CT-GL | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | |
KM416S4030CT-GLZ | SAMSUNG |
获取价格 |
暂无描述 | |
KM416S4031BT-G8 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TS | |
KM416S4031BT-GS | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX16, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-5 | |
KM416S8030 | SAMSUNG |
获取价格 |
2M x 16Bit x 4 Banks Synchronous DRAM | |
KM416S8030AT-G/FH | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 | |
KM416S8030B | SAMSUNG |
获取价格 |
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL | |
KM416S8030BN | SAMSUNG |
获取价格 |
128Mb SDRAM Shrink TSOP 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL | |
KM416S8030BN-FH | SAMSUNG |
获取价格 |
Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54, 0.400 X 0.441 INCH, 0.40 MM PITCH, STSOP2-54 | |
KM416S8030BN-FL | SAMSUNG |
获取价格 |
暂无描述 |