Datasheet > KM416C4000C-6

KM416C4000C-6

更新时间： 2023-04-15 00:00:00

品牌	Logo	应用领域
三星 - SAMSUNG		动态存储器光电二极管
页数	文件大小	规格书
35页	901K
描述
Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, TSOP-50

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中文翻译

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数据手册

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KM416C4000C-6 数据手册

KM416C4000C,KM416C4100C

CMOS DRAM

4M x 16bit CMOS Dynamic RAM with Fast Page Mode

DESCRIPTION

This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory

cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time ( -5 or -6) are optional features of this family. All of this family

have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fast Page Mode DRAM family is fabri-

cated using Samsung¢s advanced CMOS process to realize high band-width, low power consumption and high reliability.

• Fast Page Mode operation

FEATURES

• 2CAS Byte/Word Read/Write operation

• Part Identification

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Fast parallel test mode capability

• TTL(5.0V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

- KM416C4000C(5.0V, 8K Ref.)

- KM416C4100C(5.0V, 4K Ref.)

• Active Power Dissipation

Unit : mW

• Available in Plastic TSOP(II) package

• +5.0V±10% power supply

Speed

-5

495

440

660

605

-6

• Refresh Cycles

Part

NO.

Refresh

cycle

Refresh time

FUNCTIONAL BLOCK DIAGRAM

Normal

KM416C4000C*

KM416C4100C

RAS

UCAS

LCAS

64ms

Vcc

Vss

Control

Clocks

VBB Generator

* Access mode & RAS only refresh mode

: 8K cycle/64ms

Lower

Data in

Buffer

DQ0

DQ7

Row Decoder

Refresh Timer

CAS-before-RAS & Hidden refresh mode

: 4K cycle/64ms

Lower

Data out

Buffer

Refresh Control

Memory Array

4,194,304 x 16

Cells

Refresh Counter

Row Address Buffer

Col. Address Buffer

Upper

Data in

Buffer

• Performance Range

DQ8

DQ15

Speed

-5

tRAC

50ns

60ns

tCAC

13ns

15ns

tRC

tPC

A0~A12

(A0~A11)*1

Upper

Data out

Buffer

90ns

110ns

35ns

40ns

A0~A8

(A0~A9)*1

Column Decoder

-6

Note) *1 : 4K Refresh

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

12 3 4 5 6 7...35

中文翻译

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与KM416C4000C-6相关器件

型号	品牌	获取价格	描述	数据表
KM416C4000C-6000	SAMSUNG	获取价格	Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
KM416C4000CS-5	SAMSUNG	获取价格	Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50
KM416C4004BS-5	SAMSUNG	获取价格	EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
KM416C4004C	SAMSUNG	获取价格	4M x 16bit CMOS Dynamic RAM with Extended Data Out
KM416C4004CS-5	SAMSUNG	获取价格	EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
KM416C4004CS-6	SAMSUNG	获取价格	EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
KM416C4100B	SAMSUNG	获取价格	4M x 16bit CMOS Dynamic RAM with Fast Page Mode
KM416C4100B-45	SAMSUNG	获取价格	Fast Page DRAM, 4MX16, 45ns, CMOS, PDSO50
KM416C4100BS-45	SAMSUNG	获取价格	Fast Page DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50
KM416C4100BS-5	SAMSUNG	获取价格	Fast Page DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50

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