是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SOJ | 包装说明: | SOJ, SOJ40,.44 |
针数: | 40 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.02 |
风险等级: | 5.56 | 访问模式: | FAST PAGE WITH EDO |
最长访问时间: | 60 ns | 其他特性: | RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH |
I/O 类型: | COMMON | JESD-30 代码: | R-PDSO-J40 |
JESD-609代码: | e0 | 长度: | 26.04 mm |
内存密度: | 1048576 bit | 内存集成电路类型: | EDO DRAM |
内存宽度: | 16 | 功能数量: | 1 |
端口数量: | 1 | 端子数量: | 40 |
字数: | 65536 words | 字数代码: | 64000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 64KX16 | |
输出特性: | 3-STATE | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOJ | 封装等效代码: | SOJ40,.44 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 5 V |
认证状态: | Not Qualified | 刷新周期: | 256 |
座面最大高度: | 3.76 mm | 自我刷新: | YES |
最大待机电流: | 0.00015 A | 子类别: | DRAMs |
最大压摆率: | 0.09 mA | 最大供电电压 (Vsup): | 5.5 V |
最小供电电压 (Vsup): | 4.5 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | J BEND | 端子节距: | 1.27 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 10.16 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KM416C64T-6 | SAMSUNG |
获取价格 |
EDO DRAM, 64KX16, 60ns, CMOS, PDSO40, 0.400 INCH, TSOP2-44/40 | |
KM416H4030T-10 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | |
KM416H4030T-7.5 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | |
KM416H4030T-8 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | |
KM416H4031T-10 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX16, 1ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | |
KM416H4031T-7.5 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | |
KM416H4031T-8 | SAMSUNG |
获取价格 |
Synchronous DRAM, 4MX16, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 | |
KM416L16331AT-F0 | SAMSUNG |
获取价格 |
DDR DRAM, 16MX16, 0.8ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2- | |
KM416L16331AT-FY | SAMSUNG |
获取价格 |
DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2 | |
KM416L16331AT-FZ | SAMSUNG |
获取价格 |
DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2 |