生命周期: | Obsolete | 零件包装代码: | TSOP |
包装说明: | SOP, | 针数: | 50 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.32.00.02 | 风险等级: | 5.73 |
访问模式: | FAST PAGE | 最长访问时间: | 60 ns |
JESD-30 代码: | R-PDSO-G50 | 内存密度: | 67108864 bit |
内存集成电路类型: | FAST PAGE DRAM | 内存宽度: | 16 |
功能数量: | 1 | 端口数量: | 1 |
端子数量: | 50 | 字数: | 4194304 words |
字数代码: | 4000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 4MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | SOP | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 认证状态: | Not Qualified |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子形式: | GULL WING | 端子位置: | DUAL |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KM416C4100C-6000 | SAMSUNG |
获取价格 |
Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | |
KM416C4100CS-6 | SAMSUNG |
获取价格 |
Fast Page DRAM, 4MX16, 60ns, CMOS, PDSO50 | |
KM416C4104B-6 | SAMSUNG |
获取价格 |
EDO DRAM, 4MX16, 60ns, CMOS, PDSO50 | |
KM416C4104BS-45 | SAMSUNG |
获取价格 |
EDO DRAM, 4MX16, 45ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | |
KM416C4104BS-6 | SAMSUNG |
获取价格 |
EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | |
KM416C4104C | SAMSUNG |
获取价格 |
4M x 16bit CMOS Dynamic RAM with Extended Data Out | |
KM416C4104CS-5 | SAMSUNG |
获取价格 |
EDO DRAM, 4MX16, 50ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | |
KM416C4104CS-6 | SAMSUNG |
获取价格 |
EDO DRAM, 4MX16, 60ns, CMOS, PDSO50, 0.400 INCH, PLASTIC, TSOP2-50 | |
KM416C60J-7 | SAMSUNG |
获取价格 |
Fast Page DRAM, 64KX16, 70ns, CMOS, PDSO40, SOJ-40 | |
KM416C60J-L55 | SAMSUNG |
获取价格 |
Fast Page DRAM, 64KX16, 55ns, CMOS, PDSO40, SOJ-40 |