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KM23V16205DSG-10 PDF预览

KM23V16205DSG-10

更新时间: 2024-11-11 20:55:07
品牌 Logo 应用领域
三星 - SAMSUNG 有原始数据的样本ROM光电二极管内存集成电路
页数 文件大小 规格书
5页 88K
描述
MASK ROM, 512KX32, 100ns, CMOS, PDSO70, 0.500 INCH, SSOP-70

KM23V16205DSG-10 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SSOP包装说明:SSOP, SOP70,.63,32
针数:70Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.71
风险等级:5.92最长访问时间:100 ns
其他特性:CAN ALSO BE OPERATED IN 3V TO 3.6V备用内存宽度:16
JESD-30 代码:R-PDSO-G70JESD-609代码:e0
长度:28.57 mm内存密度:16777216 bit
内存集成电路类型:MASK ROM内存宽度:32
功能数量:1端子数量:70
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:512KX32
封装主体材料:PLASTIC/EPOXY封装代码:SSOP
封装等效代码:SOP70,.63,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, SHRINK PITCH并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:3/3.3 V
认证状态:Not Qualified座面最大高度:3.1 mm
最大待机电流:0.00003 A子类别:MASK ROMs
最大压摆率:0.06 mA最大供电电压 (Vsup):3.3 V
最小供电电压 (Vsup):2.7 V标称供电电压 (Vsup):3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:12.7 mmBase Number Matches:1

KM23V16205DSG-10 数据手册

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KM23V16205DSG  
CMOS MASK ROM  
16M-Bit (1Mx16 /512Kx32) CMOS MASK ROM  
FEATURES  
GENERAL DESCRIPTION  
· Switchable organization  
1,048,576 x 16(word mode)  
524,288 x 32(double word mode)  
· Fast access time  
The KM23V16205DSG is a fully static mask programmable  
ROM fabricated using silicon gate CMOS process technology,  
and is organized either as 1,048,576 x 16 bit(word mode) or as  
524,288 x 32 bit(double word mode) depending on WORD volt-  
age level.(See mode selection table)  
Random Access : 100ns(Max.)  
Page Access  
: 30ns(Max.)  
This device includes page read mode function, page read mode  
allows 4 double words (or 8 words) of data to read fast in the  
same page, CE and A2 ~ A18 should not be changed.  
This device operates with 3.0V or 3.3V power supply, and all  
inputs and outputs are TTL compatible.  
4 double Words / 8 Words page access  
· Supply voltage : single +3.0V/ single +3.3V  
· Current consumption  
Operating : 60mA(Max.)  
Standby : 30mA(Max.)  
· Fully static operation  
· All inputs and outputs TTL compatible  
· Three state outputs  
· Package  
-. KM23V16205DSG : 70-SSOP-500  
Because of its asynchronous operation, it requires no external  
clock assuring extremely easy operation.  
It is suitable for use in program memory of microprocessor, and  
data memory, character generator.  
The KM23V16205DSG is packaged in a 70-SSOP.  
FUNCTIONAL BLOCK DIAGRAM  
PIN CONFIGURATION  
A18  
X
A0  
A1  
1
70  
69  
68  
67  
66  
65  
64  
63  
62  
61  
60  
59  
58  
57  
56  
55  
54  
53  
52  
51  
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
N.C  
N.C  
N.C  
WORD  
OE  
MEMORY CELL  
MATRIX  
(524,288x32/  
1,048,576x16)  
2
BUFFERS  
AND  
DECODER  
.
.
.
.
.
.
.
.
A2  
3
A3  
4
A4  
5
A5  
6
CE  
VCC  
Q0  
7
VSS  
Q31/A-1  
Q15  
Q30  
Q14  
VSS  
VCC  
Q29  
Q13  
Q28  
Q12  
Q27  
Q11  
Q26  
Q10  
VSS  
VCC  
Q25  
Q9  
8
Y
SENSE AMP.  
DATA OUT  
BUFFERS  
Q16  
Q1  
9
BUFFERS  
AND  
DECODER  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
29  
30  
31  
32  
33  
34  
35  
Q17  
VSS  
VCC  
Q2  
A2  
Q18  
Q3  
A0,A1  
A-1  
.
.
.
Q19  
Q4  
CE  
SSOP  
Q0/Q16  
Q15/Q31  
Q20  
Q5  
CONTROL  
LOGIC  
OE  
Q21  
VSS  
VCC  
Q6  
WORD  
Pin Name  
A0 - A1  
Pin Function  
Page Address Inputs  
Q22  
Q7  
Q24  
Q8  
Q23  
VSS  
A6  
A2 - A18  
Q0 - Q30  
Address Inputs  
Data Outputs  
VCC  
N.C  
A18  
A7  
A8  
A17  
Output 31(Double word mode)/  
LSB Address(Word mode)  
Q31 /A-1  
A9  
A16  
A10  
A11  
A12  
A15  
A14  
WORD  
CE  
Double word/Word mode selection  
Chip Enable  
A13  
OE  
Output Enable  
Power  
VCC  
VSS  
KM23V16205DSG  
Ground  
N.C  
No Connection  

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