是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SSOP | 包装说明: | SSOP, SOP70,.63,32 |
针数: | 70 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.71 |
风险等级: | 5.92 | 最长访问时间: | 100 ns |
其他特性: | CAN ALSO BE OPERATED IN 3V TO 3.6V | 备用内存宽度: | 16 |
JESD-30 代码: | R-PDSO-G70 | JESD-609代码: | e0 |
长度: | 28.57 mm | 内存密度: | 16777216 bit |
内存集成电路类型: | MASK ROM | 内存宽度: | 32 |
功能数量: | 1 | 端子数量: | 70 |
字数: | 524288 words | 字数代码: | 512000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 512KX32 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SSOP |
封装等效代码: | SOP70,.63,32 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, SHRINK PITCH | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 3/3.3 V |
认证状态: | Not Qualified | 座面最大高度: | 3.1 mm |
最大待机电流: | 0.00003 A | 子类别: | MASK ROMs |
最大压摆率: | 0.06 mA | 最大供电电压 (Vsup): | 3.3 V |
最小供电电压 (Vsup): | 2.7 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | GULL WING | 端子节距: | 0.8 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 12.7 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KM23V16205DSG-12 | SAMSUNG |
获取价格 |
MASK ROM, 512KX32, 120ns, CMOS, PDSO70, 0.500 INCH, SSOP-70 | |
KM23V32000BETY | SAMSUNG |
获取价格 |
MASK ROM, 2MX16, 100ns, CMOS, PDSO48 | |
KM23V32000BETY-10 | SAMSUNG |
获取价格 |
MASK ROM, 4MX8, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | |
KM23V32000BETY-8 | SAMSUNG |
获取价格 |
MASK ROM, 4MX8, 80ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | |
KM23V32000BTY | SAMSUNG |
获取价格 |
MASK ROM, 2MX16, 100ns, CMOS, PDSO48 | |
KM23V32000BTY-10 | SAMSUNG |
获取价格 |
MASK ROM, 4MX8, 100ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | |
KM23V32000BTY-8 | SAMSUNG |
获取价格 |
MASK ROM, 4MX8, 80ns, CMOS, PDSO48, 12 X 18 MM, TSOP1-48 | |
KM23V32000C | SAMSUNG |
获取价格 |
MASK ROM, 2MX16, 150ns, CMOS, PDIP42, 0.600 INCH, DIP-42 | |
KM23V32000CET | SAMSUNG |
获取价格 |
MASK ROM, 4MX8, 150ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 | |
KM23V32000CET-12 | SAMSUNG |
获取价格 |
MASK ROM, 2MX16, 120ns, CMOS, PDSO44, 0.400 INCH, TSOP2-44 |