KK4006B

更新时间： 2024-11-25 03:48:07

品牌	Logo	应用领域
可天士 - KODENSHI		移位寄存器
页数	文件大小	规格书
7页	453K
描述
MOS 18-Stage Static Shift Register

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数据手册

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KK4006B 数据手册

TECHNICAL DATA

KK4006B

СMOS 18-Stage

Static Shift Register

The RCA-4006B types are composed of 4 separate shift register sections:

two sections of four stages and two sections of five stages with an output

tar at the fourth stage. Each section has an independent single-rail data

path.

N SUFFIX

PLASTIC

•

Standardized, symmetriсal output characteristics

Operating Voltage Range: 3.0 to 18 V

100% tested for guiescent current at 20 V

Maximum input current of 1 µA at 18 V over full package-temperature

range; 100 nA at 18 V and 25°C

D SUFFIX

SOIC

ORDERING INFORMATION

KK4006BN Plastic

KK4006BD SOIC

T_A= -55° to 125° C for all packages

•

Noise margin ( full package temperature range):

1.0 V at V_DD=5.0 V

2.0 V at V_DD=10.0 V

2.5 V at V_DD=15.0 V

PIN ASSIGNMENT

TERMINAL ASSIGNMENT

V_DD

Pin.No

Symbol

Description

Input Data

D1+4'

D1+4

D1+4^/

Output Data

Clock Data

Input Data

D2+5

D2+4

4006

D3+4

D4+5

Input Data

V_SS

Ground

V_SS

D4+4

D4+5

D3+4

D2+4

D2+5

D1+4

Output Data

Positive Pover Supply

FUNCTION TABLE

Inputs

Outputs

D1 D2-D4 D1+4...D4+4

D1+4^/

Storage

V_DD

Storage

D1...D4

Storage

X = don’t care

12 3 4 5 6 7

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与KK4006B相关器件

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KK4006BD	KODENSHI	获取价格	MOS 18-Stage Static Shift Register
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KK4011B	KODENSHI	获取价格	Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS
KK4011BD	KODENSHI	获取价格	Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS
KK4011BN	KODENSHI	获取价格	Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS
KK4012B	KODENSHI	获取价格	Dual 4-Input NAND Gate High-Voltage Silicon-Gate CMOS
KK4012BD	KODENSHI	获取价格	Dual 4-Input NAND Gate High-Voltage Silicon-Gate CMOS