是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | FBGA, BGA67,8X10,32 |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
最长访问时间: | 11.5 ns | 命令用户界面: | YES |
数据轮询: | NO | JESD-30 代码: | R-PBGA-B67 |
JESD-609代码: | e3 | 内存密度: | 262144 bit |
内存集成电路类型: | EEPROM CARD | 内存宽度: | 16 |
湿度敏感等级: | 1 | 部门数/规模: | 512 |
端子数量: | 67 | 字数: | 16777216 words |
字数代码: | 16000000 | 最高工作温度: | 85 °C |
最低工作温度: | -30 °C | 组织: | 16MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | FBGA |
封装等效代码: | BGA67,8X10,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, FINE PITCH | 页面大小: | 512 words |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 225 |
电源: | 1.8 V | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 就绪/忙碌: | YES |
部门规模: | 32K | 最大待机电流: | 0.00005 A |
子类别: | Flash Memories | 最大压摆率: | 0.04 mA |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子面层: | MATTE TIN | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 切换位: | NO |
类型: | NAND TYPE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KFM5616Q1A-DEB60 | SAMSUNG |
获取价格 |
Flash, 16MX16, 76ns, PBGA67, 7 X 9 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-67 | |
KFM5616Q1M-DEB00 | SAMSUNG |
获取价格 |
Flash, 16MX16, 76ns, PBGA63, 9.5 X 12MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 | |
KFM5616Q1M-DEB50 | SAMSUNG |
获取价格 |
Flash, 16MX16, 76ns, PBGA63, 9.50 X 12 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 | |
KFM5616Q1M-DED00 | SAMSUNG |
获取价格 |
Flash, 16MX16, 76ns, PBGA63, 9.5 X 12MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 | |
KFM85M | KEC |
获取价格 |
SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR CDMA IF STAGE) | |
KFN1C05-Q001-EF | FOXCONN |
获取价格 |
RF N Connector, 1 Contact(s), Male, Cable Mount, Clamp Terminal, Locking, Plug | |
KFN1G16Q2M-DEB5 | SAMSUNG |
获取价格 |
MuxOneNAND FLASH MEMORY | |
KFN1G16Q2M-DEB6 | SAMSUNG |
获取价格 |
MuxOneNAND FLASH MEMORY | |
KFN1G16Q2M-DED5 | SAMSUNG |
获取价格 |
MuxOneNAND FLASH MEMORY | |
KFN1G16Q2M-DED6 | SAMSUNG |
获取价格 |
MuxOneNAND FLASH MEMORY |