是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | VFBGA, | 针数: | 63 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.1.A |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.84 |
最长访问时间: | 76 ns | 其他特性: | SYNCHRONOUS BURST OPERATION IS POSSIBLE |
JESD-30 代码: | R-PBGA-B63 | JESD-609代码: | e1 |
长度: | 12 mm | 内存密度: | 268435456 bit |
内存集成电路类型: | FLASH | 内存宽度: | 16 |
湿度敏感等级: | 2 | 功能数量: | 1 |
端子数量: | 63 | 字数: | 16777216 words |
字数代码: | 16000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -30 °C |
组织: | 16MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | VFBGA | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 260 | 编程电压: | 1.8 V |
认证状态: | Not Qualified | 座面最大高度: | 1 mm |
最大供电电压 (Vsup): | 1.95 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子面层: | TIN SILVER COPPER | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 40 | 类型: | NAND TYPE |
宽度: | 9.5 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KFM85M | KEC |
获取价格 |
SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR CDMA IF STAGE) | |
KFN1C05-Q001-EF | FOXCONN |
获取价格 |
RF N Connector, 1 Contact(s), Male, Cable Mount, Clamp Terminal, Locking, Plug | |
KFN1G16Q2M-DEB5 | SAMSUNG |
获取价格 |
MuxOneNAND FLASH MEMORY | |
KFN1G16Q2M-DEB6 | SAMSUNG |
获取价格 |
MuxOneNAND FLASH MEMORY | |
KFN1G16Q2M-DED5 | SAMSUNG |
获取价格 |
MuxOneNAND FLASH MEMORY | |
KFN1G16Q2M-DED6 | SAMSUNG |
获取价格 |
MuxOneNAND FLASH MEMORY | |
KFN2G16Q2A-DEB60 | SAMSUNG |
获取价格 |
Flash, 128MX16, 76ns, PBGA63, 11 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-6 | |
KFN2G16Q2A-DEB6T | SAMSUNG |
获取价格 |
EEPROM Card, 128MX16, 76ns, Parallel, CMOS, PBGA63 | |
KFN2G16Q2A-DEB80 | SAMSUNG |
获取价格 |
Flash, 128MX16, 76ns, PBGA63, 11 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-6 | |
KFN2G16Q2A-DEB8T | SAMSUNG |
获取价格 |
EEPROM Card, 128MX16, 76ns, Parallel, CMOS, PBGA63 |