是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | FBGA, BGA63,10X12,32 |
Reach Compliance Code: | compliant | 风险等级: | 5.84 |
最长访问时间: | 76 ns | 命令用户界面: | YES |
数据轮询: | NO | JESD-30 代码: | R-PBGA-B63 |
JESD-609代码: | e3 | 内存密度: | 2147483648 bit |
内存集成电路类型: | EEPROM CARD | 内存宽度: | 16 |
湿度敏感等级: | 1 | 部门数/规模: | 2K |
端子数量: | 63 | 字数: | 134217728 words |
字数代码: | 128000000 | 最高工作温度: | 85 °C |
最低工作温度: | -30 °C | 组织: | 128MX16 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | FBGA |
封装等效代码: | BGA63,10X12,32 | 封装形状: | RECTANGULAR |
封装形式: | GRID ARRAY, FINE PITCH | 页面大小: | 1K words |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | 225 |
电源: | 1.8 V | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 就绪/忙碌: | YES |
部门规模: | 64K | 最大待机电流: | 0.00005 A |
子类别: | Flash Memories | 最大压摆率: | 0.04 mA |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | OTHER |
端子面层: | MATTE TIN | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 切换位: | YES |
类型: | NAND TYPE | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
KFN2G16Q2A-DEB80 | SAMSUNG |
获取价格 |
Flash, 128MX16, 76ns, PBGA63, 11 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-6 | |
KFN2G16Q2A-DEB8T | SAMSUNG |
获取价格 |
EEPROM Card, 128MX16, 76ns, Parallel, CMOS, PBGA63 | |
KFN2G16Q2A-DED60 | SAMSUNG |
获取价格 |
EEPROM Card, 128MX16, 76ns, Parallel, CMOS, PBGA63 | |
KFN2G16Q2A-DED6T | SAMSUNG |
获取价格 |
EEPROM Card, 128MX16, 76ns, Parallel, CMOS, PBGA63 | |
KFN2G16Q2A-DED80 | SAMSUNG |
获取价格 |
EEPROM Card, 128MX16, 76ns, Parallel, CMOS, PBGA63 | |
KFN2G16Q2A-DED8T | SAMSUNG |
获取价格 |
EEPROM Card, 128MX16, 76ns, Parallel, CMOS, PBGA63 | |
KFN2G16Q2M-DEB5 | SAMSUNG |
获取价格 |
MuxOneNAND FLASH MEMORY | |
KFN2G16Q2M-DEB50 | SAMSUNG |
获取价格 |
Flash, 128MX16, 76ns, PBGA63, 11 X 13 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-6 | |
KFN2G16Q2M-DEB5T | SAMSUNG |
获取价格 |
Flash, 128MX16, 76ns, PBGA63 | |
KFN2G16Q2M-DEB6 | SAMSUNG |
获取价格 |
MuxOneNAND FLASH MEMORY |