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KFG1216U2A-FIB6 PDF预览

KFG1216U2A-FIB6

更新时间: 2024-01-28 08:18:24
品牌 Logo 应用领域
三星 - SAMSUNG /
页数 文件大小 规格书
114页 1382K
描述
FLASH MEMORY

KFG1216U2A-FIB6 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete包装说明:FBGA, BGA63,10X12,32
Reach Compliance Code:compliant风险等级:5.92
最长访问时间:11.5 ns命令用户界面:YES
数据轮询:NOJESD-30 代码:R-PBGA-B63
内存密度:536870912 bit内存集成电路类型:FLASH
内存宽度:16湿度敏感等级:1
部门数/规模:512端子数量:63
字数:33554432 words字数代码:32000000
最高工作温度:85 °C最低工作温度:-40 °C
组织:32MX16封装主体材料:PLASTIC/EPOXY
封装代码:FBGA封装等效代码:BGA63,10X12,32
封装形状:RECTANGULAR封装形式:GRID ARRAY, FINE PITCH
页面大小:1K words并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:3.3 V
认证状态:Not Qualified就绪/忙碌:YES
部门规模:64K最大待机电流:0.00008 A
子类别:Flash Memories最大压摆率:0.04 mA
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:NO类型:NAND TYPE
Base Number Matches:1

KFG1216U2A-FIB6 数据手册

 浏览型号KFG1216U2A-FIB6的Datasheet PDF文件第3页浏览型号KFG1216U2A-FIB6的Datasheet PDF文件第4页浏览型号KFG1216U2A-FIB6的Datasheet PDF文件第5页浏览型号KFG1216U2A-FIB6的Datasheet PDF文件第7页浏览型号KFG1216U2A-FIB6的Datasheet PDF文件第8页浏览型号KFG1216U2A-FIB6的Datasheet PDF文件第9页 
OneNAND512(KFG1216x2A-xxB5)  
1.4 Architectural Benefits  
FLASH MEMORY  
OneNAND is a highly integrated non-volatile memory solution based around a NAND Flash memory array.  
The chip integrates system features including:  
A BootRAM and bootloader  
Two independent bi-directional 2KB DataRAM buffers  
A High-Speed x16 Host Interface  
On-chip Error Correction  
On-chip NOR interface controller  
This on-chip integration enables system designers to reduce external system logic and use high-density NAND Flash in applications  
that would otherwise have to use more NOR components.  
OneNAND takes advantage of the higher performance NAND program time, low power, and high density and combines it with the  
synchronous read performance of NOR. The NOR Flash host interface makes OneNAND an ideal solution for applications like G3  
Smart Phones, Camera Phones, and mobile applications that have large, advanced multimedia applications and operating systems,  
but lack a NAND controller.  
When integrated into a Samsung Multi-Chip-Package with Samsung Mobile DDR SDRAM, designers can complete a high-perfor-  
mance, small footprint solution.  
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near you.  
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