是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | FBGA, BGA63,10X12,32 | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 最长访问时间: | 9 ns |
命令用户界面: | YES | 数据轮询: | NO |
JESD-30 代码: | R-PBGA-B63 | 内存密度: | 1073741824 bit |
内存集成电路类型: | FLASH | 内存宽度: | 16 |
部门数/规模: | 1K | 端子数量: | 63 |
字数: | 67108864 words | 字数代码: | 64000000 |
最高工作温度: | 85 °C | 最低工作温度: | -30 °C |
组织: | 64MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | FBGA | 封装等效代码: | BGA63,10X12,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, FINE PITCH |
页面大小: | 1K words | 并行/串行: | PARALLEL |
电源: | 1.8 V | 认证状态: | Not Qualified |
就绪/忙碌: | YES | 部门规模: | 64K |
最大待机电流: | 0.00005 A | 子类别: | Flash Memories |
最大压摆率: | 0.035 mA | 标称供电电压 (Vsup): | 1.8 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | OTHER | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
切换位: | NO | 类型: | NAND TYPE |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
KFG1G16Q2B-DEB60 | SAMSUNG | Flash, 64MX16, 76ns, PBGA63, 10 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 |
获取价格 |
|
KFG1G16Q2B-DEB6T | SAMSUNG | EEPROM Card, 64MX16, 70ns, Parallel, CMOS, PBGA63 |
获取价格 |
|
KFG1G16Q2C-AEB60 | SAMSUNG | Flash, 1GX16, 76ns, PBGA63, 13 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE, FBGA-63 |
获取价格 |
|
KFG1G16Q2C-AEB6T | SAMSUNG | EEPROM Card, 64MX16, 11ns, Parallel, CMOS, PBGA63 |
获取价格 |
|
KFG1G16Q2C-AEB80 | SAMSUNG | Flash, 1GX16, 76ns, PBGA63, 13 X 10 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN FREE, FBGA-63 |
获取价格 |
|
KFG1G16Q2C-AEB8T | SAMSUNG | EEPROM Card, 64MX16, 9ns, Parallel, CMOS, PBGA63 |
获取价格 |