Datasheet > KF4N65FM

KF4N65FM

更新时间： 2024-09-16 01:15:43

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
6页	390K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF4N65FM 数据手册

KF4N65FM

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for active power factor

correction and switching mode power supplies.

DIM MILLIMETERS

10.16 0.2

15.87 0.2

2.54 0.2

0.8 0.1

FEATURES

3.18

0.1

· V_DSS=650V, I_D=3.6A

· Drain-Source ON Resistance :

R_DS(ON)(Max)=2.5Ω @V_GS=10V

· Qg(typ.)= 15nC

3.3 0.1

12.57 0.2

0.5 0.1

13.0 0.5

3.23 0.1

1.47 MAX

2.54 0.2

MAXIMUM RATING (Tc=25℃)

6.68 0.2

4.7

0.2

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

SYMBOL

V_DSS

RATING

650

UNIT

1. GATE

2. DRAIN

3. SOURCE

2.76 0.2

V_GSS

±30

3.6*

* Single Gauge Lead Frame

I_D

TO-220IS (1)

Drain Current

@T_C=100℃

2.3*

I_DP

Pulsed (Note1)

8.4*

Single Pulsed Avalanche Energy

(Note 2)

E_AS

103

3.1

4.5

Repetitive Avalanche Energy

(Note 1)

E_AR

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

37.9

0.30

W/℃

℃

Tc=25℃

Drain Power

Dissipation

P_D

Derate above 25℃

T_j

Maximum Junction Temperature

Storage Temperature Range

150

T_stg

-55∼ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

3.3

℃/W

Thermal Resistance,

Junction-to-Ambient

62.5

* : Drain current limited by maximum junction temperature.

PIN CONNECTION

2013. 5. 02

Revision No : 0

1/6

12 3 4 5 6

中文翻译

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