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KF4N80F PDF预览

KF4N80F

更新时间: 2024-11-27 17:15:43
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
6页 384K
描述
TO-220IS(1)

KF4N80F 数据手册

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KF4N80F  
SEMICONDUCTOR  
N CHANNEL MOS FIELD  
EFFECT TRANSISTOR  
TECHNICAL DATA  
General Description  
C
A
This planar stripe MOSFET has better characteristics, such as fast  
switching time, low on resistance, low gate charge and excellent  
avalanche characteristics. It is mainly suitable for active power factor  
correction and switching mode power supplies.  
DIM MILLIMETERS  
E
_
10.16 0.2  
+
A
B
C
D
E
_
15.87 0.2  
+
_
2.54 0.2  
+
_
0.8 0.1  
+
_
+
3.18  
0.1  
_
3.3 0.1  
+
F
_
12.57 0.2  
+
G
H
J
L
M
N
_
0.5 0.1  
+
R
_
13.0 0.5  
+
_
K
L
3.23 0.1  
+
FEATURES  
D
1.47 MAX  
· VDSS=800V, ID=4A  
1.47 MAX  
M
N
O
Q
R
N
H
_
2.54 0.2  
+
· Drain-Source ON Resistance :  
RDS(ON)(Max)=2.6@VGS=10V  
· Qg(typ.)= 17nC  
_
6.68 0.2  
+
_
4.7  
+
_
0.2  
1. GATE  
2. DRAIN  
3. SOURCE  
2.76 0.2  
+
1
2
3
*Single Gauge Lead Frame  
TO-220IS (1)  
MAXIMUM RATING (Tc=25)  
CHARACTERISTIC  
Drain-Source Voltage  
Gate-Source Voltage  
@TC=25℃  
SYMBOL  
VDSS  
RATING  
800  
UNIT  
V
PIN CONNECTION  
D
VGSS  
V
±30  
4*  
ID  
Drain Current  
@TC=100℃  
2.5*  
11*  
A
G
IDP  
Pulsed (Note1)  
Single Pulsed Avalanche Energy  
(Note 2)  
EAS  
250  
4.7  
4.5  
mJ  
mJ  
S
Repetitive Avalanche Energy  
(Note 1)  
EAR  
Peak Diode Recovery dv/dt  
(Note 3)  
dv/dt  
V/ns  
43  
0.34  
W
W/℃  
Tc=25℃  
Drain Power  
Dissipation  
PD  
Derate above 25℃  
Tj  
Maximum Junction Temperature  
Storage Temperature Range  
150  
Tstg  
-55150  
Thermal Characteristics  
RthJC  
RthJA  
Thermal Resistance, Junction-to-Case  
2.9  
/W  
/W  
Thermal Resistance,  
Junction-to-Ambient  
62.5  
* : Drain current limited by maximum junction temperature.  
2013. 4. 26  
Revision No : 0  
1/6  

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