Datasheet > KF4N65P

KF4N65P

更新时间： 2024-11-27 01:00:43

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
7页	419K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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中文翻译

获取价格

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KF4N65P 数据手册

KF4N65P/F

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

KF4N65P

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for active power factor

correction and switching mode power supplies.

DIM MILLIMETERS

9.9 + 0.2

15.95 MAX

1.3+0.1/-0.05

0.8 + 0.1

FEATURES

3.6 0.2

· V_DSS=650V, I_D=3.6A

· Drain-Source ON Resistance :

R_DS(ON)(Max)=2.5Ω @V_GS=10V

· Qg(typ.)= 12nC

2.8 + 0.1

3.7

0.5+0.1/-0.05

1.5

13.08 + 0.3

1.46

1.4 0.1

MAXIMUM RATING (Tc=25℃)

1.27 0.1

2.54 0.2

RATING

4.5 0.2

CHARACTERISTIC

SYMBOL

UNIT

2.4 0.2

9.2 +0.2

1. GATE

2. DRAIN

3. SOURCE

KF4N65P

KF4N65F

V_DSS

V_GSS

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

650

±30

TO-220AB

3.6

2.3

8.4

3.6*

2.3*

8.4*

I_D

Drain Current

@T_C=100℃

KF4N65F

I_DP

Pulsed (Note1)

Single Pulsed Avalanche Energy

(Note 2)

E_AS

103

3.1

4.5

Repetitive Avalanche Energy

(Note 1)

E_AR

DIM MILLIMETERS

10.16 0.2

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

15.87 0.2

2.54 0.2

0.8 0.1

83.3

0.67

37.9

0.30

W/℃

℃

Tc=25℃

Drain Power

Dissipation

P_D

3.18

0.1

3.3 0.1

Derate above 25℃

12.57 0.2

T_j

Maximum Junction Temperature

Storage Temperature Range

150

0.5 0.1

13.0 0.5

T_stg

-55∼ 150

℃

3.23 0.1

1.47 MAX

Thermal Characteristics

2.54 0.2

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

1.5

3.3

℃/W

6.68 0.2

Thermal Resistance,

Junction-to-Ambient

4.7

0.2

1. GATE

2. DRAIN

3. SOURCE

62.5

2.76 0.2

* : Drain current limited by maximum junction temperature.

* Single Gauge Lead Frame

TO-220IS (1)

PIN CONNECTION

2011. 6. 21

Revision No : 0

1/7

12 3 4 5 6 7

中文翻译

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