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KF4N65P

更新时间: 2024-09-16 01:00:43
品牌 Logo 应用领域
KEC /
页数 文件大小 规格书
7页 419K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

KF4N65P 数据手册

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KF4N65P/F  
SEMICONDUCTOR  
N CHANNEL MOS FIELD  
EFFECT TRANSISTOR  
TECHNICAL DATA  
General Description  
KF4N65P  
A
This planar stripe MOSFET has better characteristics, such as fast  
switching time, low on resistance, low gate charge and excellent  
avalanche characteristics. It is mainly suitable for active power factor  
correction and switching mode power supplies.  
O
C
F
E
I
DIM MILLIMETERS  
G
Q
_
9.9 + 0.2  
A
B
C
D
E
F
B
15.95 MAX  
1.3+0.1/-0.05  
_
0.8 + 0.1  
FEATURES  
_
3.6 0.2  
+
· VDSS=650V, ID=3.6A  
· Drain-Source ON Resistance :  
RDS(ON)(Max)=2.5@VGS=10V  
· Qg(typ.)= 12nC  
K
_
2.8 + 0.1  
P
3.7  
0.5+0.1/-0.05  
1.5  
G
H
I
M
N
L
J
D
_
13.08 + 0.3  
J
1.46  
H
K
L
M
N
O
P
N
_
1.4 0.1  
+
MAXIMUM RATING (Tc=25)  
_
1.27 0.1  
+
_
2.54 0.2  
+
RATING  
_
4.5 0.2  
+
CHARACTERISTIC  
SYMBOL  
UNIT  
_
2.4 0.2  
+
_
9.2 +0.2  
1
2
3
1. GATE  
2. DRAIN  
3. SOURCE  
KF4N65P  
KF4N65F  
Q
VDSS  
VGSS  
Drain-Source Voltage  
Gate-Source Voltage  
@TC=25℃  
650  
V
V
±30  
TO-220AB  
3.6  
2.3  
8.4  
3.6*  
2.3*  
8.4*  
ID  
Drain Current  
@TC=100℃  
A
KF4N65F  
IDP  
Pulsed (Note1)  
C
A
Single Pulsed Avalanche Energy  
(Note 2)  
EAS  
103  
3.1  
4.5  
mJ  
mJ  
Repetitive Avalanche Energy  
(Note 1)  
EAR  
DIM MILLIMETERS  
E
_
A
B
C
D
E
10.16 0.2  
+
Peak Diode Recovery dv/dt  
(Note 3)  
dv/dt  
V/ns  
_
15.87 0.2  
+
_
2.54 0.2  
+
_
0.8 0.1  
+
83.3  
0.67  
37.9  
0.30  
W
W/℃  
Tc=25℃  
Drain Power  
Dissipation  
PD  
_
+
3.18  
0.1  
_
3.3 0.1  
+
Derate above 25℃  
F
_
12.57 0.2  
+
G
H
J
L
Tj  
Maximum Junction Temperature  
Storage Temperature Range  
150  
M
_
0.5 0.1  
+
R
_
13.0 0.5  
+
Tstg  
-55150  
_
K
L
3.23 0.1  
+
D
1.47 MAX  
1.47 MAX  
Thermal Characteristics  
M
N
O
Q
R
N
N
H
_
2.54 0.2  
+
RthJC  
RthJA  
Thermal Resistance, Junction-to-Case  
1.5  
3.3  
/W  
/W  
_
6.68 0.2  
+
Thermal Resistance,  
Junction-to-Ambient  
_
4.7  
+
_
0.2  
1. GATE  
2. DRAIN  
3. SOURCE  
62.5  
62.5  
2.76 0.2  
+
1
2
3
* : Drain current limited by maximum junction temperature.  
* Single Gauge Lead Frame  
TO-220IS (1)  
PIN CONNECTION  
D
G
S
2011. 6. 21  
Revision No : 0  
1/7  

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