Datasheet > KF2N60D/I

KF2N60D/I

更新时间： 2024-11-10 01:12:07

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
6页	392K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF2N60D/I 数据手册

KF2N60D/I

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

KF2N60D

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for switching mode

power supplies.

DIM MILLIMETERS

6.60 + 0.20

6.10+0.20

5.34 + 0.30

0.70+0.20

2.70 + 0.15

FEATURES

2.30+0.10

0.96 MAX

0.90 MAX

· V_DSS= 600V, I_D= 2.0A

· R_DS(ON)=4.4Ω (Max) @V_GS= 10V

· Qg(typ) = 6.0nC

1.80+0.20

2.30+0.10

0.50 + 0.10

0.50+0.10

0.70 MIN

0.1 MAX

MAXIMUM RATING (Tc=25℃)

1. GATE

2. DRAIN

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

SYMBOL

V_DSS

RATING

600

UNIT

3. SOURCE

V_GSS

±30

2.0

I_D

DPAK (1)

KF2N60I

Drain Current

@T_C=100℃

1.2

I_DP

Pulsed (Note1)

4.0

Single Pulsed Avalanche Energy

(Note 2)

E_AS

2.3

4.5

Repetitive Avalanche Energy

(Note 1)

E_AR

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

DIM MILLIMETERS

40.3

0.32

W/℃

℃

Tc=25℃

0.2

6.6

Drain Power

Dissipation

P_D

6.1 0.2

Derate above 25℃

5.34 0.3

0.7 0.2

T_j

Maximum Junction Temperature

Storage Temperature Range

150

9.3 0.3

2.3 0.2

T_stg

-55∼ 150

℃

0.76 0.1

2.3 0.1

Thermal Characteristics

0.5 0.1

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

3.1

℃/W

1.8 0.2

0.5

0.1

Thermal Resistance, Junction-to-

Ambient

1.0 0.1

110

0.96 MAX

1.02 0.3

1. GATE

2. DRAIN

3. SOURCE

PIN CONNECTION

(KF2N60D/I)

IPAK(1)

2011. 9. 21

Revision No : 1

1/6

12 3 4 5 6

中文翻译

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