Datasheet > KF2N60L

KF2N60L

更新时间： 2024-09-30 12:00:55

品牌	Logo	应用领域
KEC		栅极
页数	文件大小	规格书
7页	1081K
描述
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

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KF2N60L 数据手册

KF2N60L

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for switching mode

power supplies.

FEATURES

· V_DSS= 600V, I_D= 0.70A

· R_DS(ON)=4.4Ω (Max) @V_GS= 10V

· Qg(typ) = 6.0nC

MAXIMUM RATING (Tc=25℃)

CHARACTERISTIC

Drain-Source Voltage

Gate-Source Voltage

T_C=25℃

SYMBOL

V_DSS

RATING

600

UNIT

V_GSS

±30

0.70

I_D

Drain Current

T_C=100℃

0.44

I_DP

Pulsed (Note1)

4.0

Single Pulsed Avalanche Energy

(Note 2)

E_AS

1.5

4.5

PIN CONNECTION

Repetitive Avalanche Energy

(Note 1)

E_AR

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

V/ns

5.4

0.043

W/℃

Tc=25℃

Drain Power

Dissipation

P_D

Derate above 25℃

Ta=25℃

T_j

Maximum Junction Temperature

Storage Temperature Range

150

℃

T_stg

-55∼ 150

℃

Thermal Characteristics

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

℃/W

Thermal Resistance, Junction-to-

Ambient

125

2013. 1. 14

Revision No : 0

1/6

12 3 4 5 6 7

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