Datasheet > KF2N60PF

KF2N60PF

更新时间： 2024-10-01 01:12:07

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
7页	420K
描述
N CHANNEL MOS FIELD EFFECT TRANSISTOR

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KF2N60PF 数据手册

KF2N60P/F

SEMICONDUCTOR

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

TECHNICAL DATA

General Description

KF2N60P

This planar stripe MOSFET has better characteristics, such as fast

switching time,low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for electronic ballast and

switching mode power supplies.

DIM MILLIMETERS

9.9 + 0.2

15.95 MAX

1.3+0.1/-0.05

0.8+ 0.1

FEATURES

3.6 0.2

2.8+ 0.1

· V_DSS= 600V, I_D= 2A

3.7

· Drain-Source ON Resistance : R_DS(ON)=4.4Ω (Max) @V_GS= 10V

· Qg(typ) = 6.0nC

0.5+0.1/-0.05

1.5

13.08+ 0.3

1.46

1.4 + 0.1

1.27+ 0.1

2.54+ 0.2

MAXIMUM RATING (Ta=25℃)

4.5 0.2

2.4 0.2

RATING

9.2 + 0.2

CHARACTERISTIC

SYMBOL

UNIT

1. GATE

2. DRAIN

3. SOURCE

KF2N60P

KF2N60F

V_DSS

V_GSS

Drain-Source Voltage

Gate-Source Voltage

@T_C=25℃

600

±30

TO-220AB

1.3

1.3*

I_D

Drain Current

@T_C=100℃

KF2N60F

I_DP

Pulsed (Note1)

Single Pulsed Avalanche Energy

(Note 2)

E_AS

2.3

4.5

Repetitive Avalanche Energy

(Note 1)

E_AR

DIM MILLIMETERS

10.16 0.2

Peak Diode Recovery dv/dt

(Note 3)

15.87 0.2

dv/dt

V/ns

2.54 0.2

0.8 0.1

28.4

0.23

W/℃

℃

Tc=25℃

Drain Power

Dissipation

3.18

0.1

P_D

3.3 0.1

0.4

Derate above 25℃

12.57 0.2

T_j

0.5 0.1

Maximum Junction Temperature

Storage Temperature Range

150

13.0 0.5

T_stg

-55∼ 150

℃

3.23 0.1

1.47 MAX

Thermal Characteristics

2.54 0.2

R_thJC

R_thJA

Thermal Resistance, Junction-to-Case

2.5

4.4

62.5

℃/W

6.68 0.2

4.7

0.2

Thermal Resistance, Junction-to-

Ambient

62.5

2.76 0.2

1. GATE

2. DRAIN

3. SOURCE

* : Drain current limited by maximum junction temperature.

* Single Gauge Lead Frame

PIN CONNECTION

(KF2N60P, KF2N60F)

TO-220IS (1)

2011. 4. 29

Revision No : 0

1/2

12 3 4 5 6 7

中文翻译

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