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K9K1G08Q0A PDF预览

K9K1G08Q0A

更新时间: 2024-09-29 22:06:51
品牌 Logo 应用领域
三星 - SAMSUNG 闪存
页数 文件大小 规格书
43页 901K
描述
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

K9K1G08Q0A 数据手册

 浏览型号K9K1G08Q0A的Datasheet PDF文件第2页浏览型号K9K1G08Q0A的Datasheet PDF文件第3页浏览型号K9K1G08Q0A的Datasheet PDF文件第4页浏览型号K9K1G08Q0A的Datasheet PDF文件第5页浏览型号K9K1G08Q0A的Datasheet PDF文件第6页浏览型号K9K1G08Q0A的Datasheet PDF文件第7页 
Preliminary  
FLASH MEMORY  
K9K1G08Q0A K9K1G16Q0A  
K9K1G08U0A K9K1G16U0A  
Document Title  
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
Initial issue.  
Mar. 17th 2003 Preliminary  
0.1  
1. Note is added.  
Jun. 4th 2003  
Preliminary  
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for  
durations of 20 ns or less.)  
2. 63FBGA,1.8V product is added.  
K9K1GXXQ0A-GCB0,GIB0,JCB0,JIB0  
Aug. 1st 2003  
Errata is deleted.  
AC parameters are changed.  
Preliminary  
0.2  
tWC tWH tWP tRC tREH tRP tREA tCEA  
Before 45 15 25 50 15 25 30  
After 60 20 40 60 20 40 40  
45  
55  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.  
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the  
right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you  
have any questions, please contact the SAMSUNG branch office near your office.  
1

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