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K9K1G08R0B PDF预览

K9K1G08R0B

更新时间: 2024-11-29 22:06:51
品牌 Logo 应用领域
三星 - SAMSUNG 闪存
页数 文件大小 规格书
41页 1074K
描述
128M x 8 Bit NAND Flash Memory

K9K1G08R0B 数据手册

 浏览型号K9K1G08R0B的Datasheet PDF文件第2页浏览型号K9K1G08R0B的Datasheet PDF文件第3页浏览型号K9K1G08R0B的Datasheet PDF文件第4页浏览型号K9K1G08R0B的Datasheet PDF文件第5页浏览型号K9K1G08R0B的Datasheet PDF文件第6页浏览型号K9K1G08R0B的Datasheet PDF文件第7页 
K9K1G08R0B  
K9K1G08B0B  
K9K1G08U0B  
Advance  
FLASH MEMORY  
Document Title  
128M x 8 Bit NAND Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
0.1  
Initial issue.  
Mar. 17th 2003 Advance  
Oct. 11th 2004 Advance  
1. Note 1 ( Program/Erase Characteristics) is added( page 13 )  
2. NAND Flash Technical Notes is changed.  
-Invalid block -> initial invalid block ( page 15 )  
-Error in write or read operation ( page 16 )  
-Program Flow Chart ( page 16 )  
3. Vcc range is changed  
-1.7V~1.95V ->1.65V~1.95V  
4. 2.7V device is added  
5. Multi plane operation and Copy-Back Program are not supported with 1.8V  
device.  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.  
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near your office.  
1

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