5秒后页面跳转
K9K1G08R0B-JCB0T PDF预览

K9K1G08R0B-JCB0T

更新时间: 2024-09-30 18:48:11
品牌 Logo 应用领域
三星 - SAMSUNG 内存集成电路
页数 文件大小 规格书
41页 1075K
描述
Flash, 128MX8, 40ns, PBGA63

K9K1G08R0B-JCB0T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FBGA, BGA63,10X12,32
Reach Compliance Code:compliant风险等级:5.84
最长访问时间:40 ns命令用户界面:YES
数据轮询:NOJESD-30 代码:R-PBGA-B63
JESD-609代码:e3内存密度:1073741824 bit
内存集成电路类型:FLASH内存宽度:8
湿度敏感等级:1部门数/规模:8K
端子数量:63字数:134217728 words
字数代码:128000000最高工作温度:70 °C
最低工作温度:组织:128MX8
封装主体材料:PLASTIC/EPOXY封装代码:FBGA
封装等效代码:BGA63,10X12,32封装形状:RECTANGULAR
封装形式:GRID ARRAY, FINE PITCH页面大小:512 words
并行/串行:PARALLEL峰值回流温度(摄氏度):225
电源:1.8 V认证状态:Not Qualified
就绪/忙碌:YES部门规模:16K
最大待机电流:0.0001 A子类别:Flash Memories
最大压摆率:0.02 mA标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:MATTE TIN
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
切换位:NO类型:NAND TYPE
Base Number Matches:1

K9K1G08R0B-JCB0T 数据手册

 浏览型号K9K1G08R0B-JCB0T的Datasheet PDF文件第2页浏览型号K9K1G08R0B-JCB0T的Datasheet PDF文件第3页浏览型号K9K1G08R0B-JCB0T的Datasheet PDF文件第4页浏览型号K9K1G08R0B-JCB0T的Datasheet PDF文件第5页浏览型号K9K1G08R0B-JCB0T的Datasheet PDF文件第6页浏览型号K9K1G08R0B-JCB0T的Datasheet PDF文件第7页 
K9K1G08R0B  
K9K1G08B0B  
K9K1G08U0B  
FLASH MEMORY  
Document Title  
128M x 8 Bit NAND Flash Memory  
Revision History  
Revision No. History  
Draft Date  
Remark  
0.0  
0.1  
Initial issue.  
Mar. 17th 2003 Advance  
Oct. 11th 2004 Advance  
1. Note 1 ( Program/Erase Characteristics) is added( page 13 )  
2. NAND Flash Technical Notes is changed.  
-Invalid block -> initial invalid block ( page 15 )  
-Error in write or read operation ( page 16 )  
-Program Flow Chart ( page 16 )  
3. Vcc range is changed  
-1.7V~1.95V ->1.65V~1.95V  
4. 2.7V device is added  
5. Multi plane operation and Copy-Back Program are not supported with 1.8V  
device.  
1. The flow chart to creat the initial invalid block table is changed.  
0.2  
1.0  
May 6th. 2005 Preliminary  
May 30th 2005  
Final  
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.  
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm  
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right  
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have  
any questions, please contact the SAMSUNG branch office near your office.  
1

与K9K1G08R0B-JCB0T相关器件

型号 品牌 获取价格 描述 数据表
K9K1G08R0B-JIB0 SAMSUNG

获取价格

Flash, 128MX8, 40ns, PBGA63
K9K1G08R0B-JIB0T SAMSUNG

获取价格

Flash, 128MX8, 40ns, PBGA63
K9K1G08U0A SAMSUNG

获取价格

128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0A1 SAMSUNG

获取价格

128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0A-FCB0 SAMSUNG

获取价格

Flash, 128MX8, 30ns, PDSO48,
K9K1G08U0A-FCB00 SAMSUNG

获取价格

Flash, 128MX8, 30ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, LEAD FREE, PLASTIC, WSOP1-48
K9K1G08U0A-FIB00 SAMSUNG

获取价格

Flash, 128MX8, 30ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, LEAD FREE, PLASTIC, WSOP1-48
K9K1G08U0A-GCB00 SAMSUNG

获取价格

Flash, 128MX8, 30ns, PBGA63, FBGA-63
K9K1G08U0A-GIB00 SAMSUNG

获取价格

Flash, 128MX8, 30ns, PBGA63, FBGA-63
K9K1G08U0A-JCB0 SAMSUNG

获取价格

Flash, 128MX8, 30ns, PBGA63,