是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | BGA |
包装说明: | FBGA-63 | 针数: | 63 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.1.A |
HTS代码: | 8542.32.00.51 | 风险等级: | 5.91 |
最长访问时间: | 30 ns | 命令用户界面: | YES |
数据轮询: | NO | JESD-30 代码: | R-PBGA-B63 |
长度: | 13.5 mm | 内存密度: | 1073741824 bit |
内存集成电路类型: | FLASH | 内存宽度: | 8 |
功能数量: | 1 | 部门数/规模: | 8K |
端子数量: | 63 | 字数: | 134217728 words |
字数代码: | 128000000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 128MX8 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TFBGA | 封装等效代码: | BGA63,10X12,32 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE, FINE PITCH |
页面大小: | 512 words | 并行/串行: | PARALLEL |
电源: | 2.7 V | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 就绪/忙碌: | YES |
座面最大高度: | 1.2 mm | 部门规模: | 16K |
最大待机电流: | 0.00005 A | 子类别: | Flash Memories |
最大压摆率: | 0.02 mA | 最大供电电压 (Vsup): | 2.9 V |
最小供电电压 (Vsup): | 2.5 V | 标称供电电压 (Vsup): | 2.7 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子形式: | BALL |
端子节距: | 0.8 mm | 端子位置: | BOTTOM |
切换位: | NO | 类型: | SLC NAND TYPE |
宽度: | 8.5 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
K9K1G08B0B-GCB0T | SAMSUNG |
获取价格 |
Flash, 128MX8, 30ns, PBGA63 | |
K9K1G08B0B-GIB0 | SAMSUNG |
获取价格 |
Flash, 128MX8, 30ns, PBGA63 | |
K9K1G08B0B-GIB00 | SAMSUNG |
获取价格 |
Flash, 128MX8, 30ns, PBGA63, FBGA-63 | |
K9K1G08B0B-GIB0T | SAMSUNG |
获取价格 |
Flash, 128MX8, 30ns, PBGA63 | |
K9K1G08B0B-JCB0 | SAMSUNG |
获取价格 |
Flash, 128MX8, 30ns, PBGA63 | |
K9K1G08B0B-JCB00 | SAMSUNG |
获取价格 |
Flash, 128MX8, 30ns, PBGA63, LEAD FREE, FBGA-63 | |
K9K1G08B0B-JCB0T | SAMSUNG |
获取价格 |
Flash, 128MX8, 30ns, PBGA63 | |
K9K1G08B0B-JIB0 | SAMSUNG |
获取价格 |
Flash, 128MX8, 30ns, PBGA63 | |
K9K1G08B0B-JIB00 | SAMSUNG |
获取价格 |
Flash, 128MX8, 30ns, PBGA63, LEAD FREE, FBGA-63 | |
K9K1G08B0B-JIB0T | SAMSUNG |
获取价格 |
Flash, 128MX8, 30ns, PBGA63 |