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K9F5608U0B-VIB00 PDF预览

K9F5608U0B-VIB00

更新时间： 2024-02-12 10:03:38
品牌 Logo 应用领域
三星 - SAMSUNG 光电二极管
页数 文件大小 规格书
34页 605K
描述
Flash, 32MX8, 30ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, PLASTIC, WSOP1-48

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K9F5608U0B-VIB00 数据手册

 浏览型号K9F5608U0B-VIB00的Datasheet PDF文件第1页浏览型号K9F5608U0B-VIB00的Datasheet PDF文件第2页浏览型号K9F5608U0B-VIB00的Datasheet PDF文件第4页浏览型号K9F5608U0B-VIB00的Datasheet PDF文件第5页浏览型号K9F5608U0B-VIB00的Datasheet PDF文件第6页浏览型号K9F5608U0B-VIB00的Datasheet PDF文件第7页 
K9F5608Q0B K9F5616Q0B  
K9F5608U0B K9F5616U0B  
FLASH MEMORY  
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory  
PRODUCT LIST  
Part Number  
Vcc Range  
Organization  
PKG Type  
K9F5608Q0B-D,H  
K9F5616Q0B-D,H  
K9F5608U0B-Y,P  
K9F5608U0B-D,H  
K9F5608U0B-V,F  
K9F5616U0B-Y,P  
K9F5616U0B-D,H  
X8  
1.70 ~ 1.95V  
TBGA  
X16  
TSOP1  
TBGA  
X8  
2.7 ~ 3.6V  
WSOP1  
TSOP1  
TBGA  
X16  
FEATURES  
· Voltage Supply  
· Fast Write Cycle Time  
- 1.8V device(K9F56XXQ0B) : 1.70~1.95V  
- 3.3V device(K9F56XXU0B) : 2.7 ~ 3.6 V  
· Organization  
- Program time : 200ms(Typ.)  
- Block Erase Time : 2ms(Typ.)  
· Command/Address/Data Multiplexed I/O Port  
· Hardware Data Protection  
- Memory Cell Array  
- X8 device(K9F5608X0B) : (32M + 1024K)bit x 8 bit  
- X16 device(K9F5616X0B) : (16M + 512K)bit x 16bit  
- Data Register  
- Program/Erase Lockout During Power Transitions  
· Reliable CMOS Floating-Gate Technology  
- Endurance  
: 100K Program/Erase Cycles  
- X8 device(K9F5608X0B) : (512 + 16)bit x 8bit  
- X16 device(K9F5616X0B) : (256 + 8)bit x16bit  
· Automatic Program and Erase  
- Data Retention : 10 Years  
· Command Register Operation  
· Intelligent Copy-Back  
- Page Program  
· Unique ID for Copyright Protection  
· Package  
- K9F56XXU0B-YCB0/YIB0  
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)  
- K9F56XXX0B-DCB0/DIB0  
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)  
- K9F5608U0B-VCB0/VIB0  
- X8 device(K9F5608X0B) : (512 + 16)Byte  
- X16 device(K9F5616X0B) : (256 + 8)Word  
- Block Erase :  
- X8 device(K9F5608X0B) : (16K + 512)Byte  
- X16 device(K9F5616X0B) : ( 8K + 256)Word  
· Page Read Operation  
- Page Size  
- X8 device(K9F5608X0B) : (512 + 16)Byte  
- X16 device(K9F5616X0B) : (256 + 8)Word  
48 - Pin WSOP I (12X17X0.7mm)  
- K9F56XXU0B-PCB0/PIB0  
48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - Pb-free Package  
- K9F56XXX0B-HCB0/HIB0  
- Random Access  
: 10ms(Max.)  
- Serial Page Access : 50ns(Min.)  
63- Ball TBGA ( 9 x 11 /0.8mm pitch , Width 1.0 mm)  
- Pb-free Package  
- K9F5608U0B-FCB0/FIB0  
48 - Pin WSOP I (12X17X0.7mm) - Pb-free Package  
* K9F5608U0B-V,F(WSOPI ) is the same device as  
K9F5608U0B-Y,P(TSOP1) except package type.  
GENERAL DESCRIPTION  
Offered in 32Mx8bit or 16Mx16bit, the K9F56XXX0B is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V  
Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be  
performed in typical 200ms on the 528-byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in  
typical 2ms on a 16K-byte(X8 device) or 8K-word(X16 device) block. Data in the page can be read out at 50ns cycle time per  
byte(X8 device) or word(X16 device).The I/O pins serve as the ports for address and data input/output as well as command input.  
The on-chip write control automates all program and erase functions including pulse repetition, where required, and internal verifica-  
tion and margining of data. Even the write-intensive systems can take advantage of the K9F56XXX0B¢s extended reliability of 100K  
program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm.  
The K9F56XXX0B is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable  
applications requiring non-volatility.  
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与K9F5608U0B-VIB00相关器件

型号 品牌 获取价格 描述 数据表
K9F5608U0B-YCB0 SAMSUNG

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 		32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-YCB00 SAMSUNG

获取价格

 		Flash, 32MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
K9F5608U0B-YIB0 SAMSUNG

获取价格

 		32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
K9F5608U0B-YIB00 SAMSUNG

获取价格

 		Flash, 32MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48
K9F5608U0C SAMSUNG

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 		512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-D SAMSUNG

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 		512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-DCB0 SAMSUNG

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 		512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-DCB00 SAMSUNG

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 		Flash, 32MX8, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63
K9F5608U0C-DIB0 SAMSUNG

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 		512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-DIB00 SAMSUNG

获取价格

 		Flash, 32MX8, 30ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, TBGA-63

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