Datasheet > K9F5608U0B-VIB00

K9F5608U0B-VIB00

更新时间： 2024-02-08 14:24:15

品牌	Logo	应用领域
三星 - SAMSUNG		光电二极管
页数	文件大小	规格书
34页	605K
描述
Flash, 32MX8, 30ns, PDSO48, 12 X 17 MM, 0.70 MM HEIGHT, PLASTIC, WSOP1-48

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K9F5608U0B-VIB00 数据手册

K9F5608Q0B K9F5616Q0B

K9F5608U0B K9F5616U0B

FLASH MEMORY

Data Protection & Power up sequence

The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector

disables all functions whenever Vcc is below about 1.1V(1.8V device), 2V(3.3V device). WP pin provides hardware protection and is

recommended to be kept at VIL during power-up and power-down and recovery time of minimum 10ms is required before internal cir-

cuit gets ready for any command sequences as shown in Figure 16. The two step command sequence for program/erase provides

additional software protection.

Figure 16. AC Waveforms for Power Transition

1.8V device : ~ 1.5V

3.3V device : ~ 2.5V

1.8V device : ~ 1.5V

3.3V device : ~ 2.5V

VCC

High

10ms

1...31 32 3334

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型号	品牌	描述	获取价格	数据表
K9F5608U0B-YCB0	SAMSUNG	32M x 8 Bit , 16M x 16 Bit NAND Flash Memory	获取价格
K9F5608U0B-YCB00	SAMSUNG	Flash, 32MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48	获取价格
K9F5608U0B-YIB0	SAMSUNG	32M x 8 Bit , 16M x 16 Bit NAND Flash Memory	获取价格
K9F5608U0B-YIB00	SAMSUNG	Flash, 32MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, PLASTIC, TSOP1-48	获取价格
K9F5608U0C	SAMSUNG	512Mb/256Mb 1.8V NAND Flash Errata	获取价格
K9F5608U0C-D	SAMSUNG	512Mb/256Mb 1.8V NAND Flash Errata	获取价格